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Issue 4, 2024
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1983

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February

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From the current literature


Trap trajectories and the cutoff of dissipative effects in semiconductors


1. Topology of trajectories in momentum space 175
2. Cutoff of dissipative effects 175
3. Smearing of the critical fields H1 and H2 176
4. Gauss-ampere characteristics (experiment) 177
5. Nonequilibrium nature of the distribution in crossed fields 177
6. Hole inversion in germanium 178
7. Alternating fields 179
References 179

Fulltext pdf (271 KB)
Fulltext is also available at DOI: 10.1070/PU1983v026n02ABEH004324
PACS: 72.20.Jv, 72.20.My, 72.20.Dp (all)
DOI: 10.1070/PU1983v026n02ABEH004324
URL: https://ufn.ru/en/articles/1983/2/e/
Citation: Levinson I B "Trap trajectories and the cutoff of dissipative effects in semiconductors" Sov. Phys. Usp. 26 176–181 (1983)
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Оригинал: Левинсон И Б «Траектории-ловушки и срыв диссипативных эффектов в полупроводниках» УФН 139 347–355 (1983); DOI: 10.3367/UFNr.0139.198302f.0347

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