Trap trajectories and the cutoff of dissipative effects in semiconductors

1. Topology of trajectories in momentum space 175
2. Cutoff of dissipative effects 175
3. Smearing of the critical fields H₁ and H₂ 176
4. Gauss-ampere characteristics (experiment) 177
5. Nonequilibrium nature of the distribution in crossed fields 177
6. Hole inversion in germanium 178
7. Alternating fields 179
References 179

PACS: 72.20.Jv, 72.20.My, 72.20.Dp (all)
DOI: 10.1070/PU1983v026n02ABEH004324
URL: https://ufn.ru/en/articles/1983/2/e/
Citation: Levinson I B "Trap trajectories and the cutoff of dissipative effects in semiconductors" Sov. Phys. Usp. 26 176–181 (1983)

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PT Journal Article
TI Trap trajectories and the cutoff of dissipative effects in semiconductors
AU Levinson I B
FAU Levinson IB
DP 10 Feb, 1983
TA Phys. Usp.
VI 26
IP 2
PG 176-181
RX 10.1070/PU1983v026n02ABEH004324
URL https://ufn.ru/en/articles/1983/2/e/
SO Phys. Usp. 1983 Feb 10;26(2):176-181

Оригинал: Левинсон И Б «Траектории-ловушки и срыв диссипативных эффектов в полупроводниках» УФН 139 347–355 (1983); DOI: 10.3367/UFNr.0139.198302f.0347