Issues

 / 

1983

 / 

February

  

From the current literature


Trap trajectories and the cutoff of dissipative effects in semiconductors

1. Topology of trajectories in momentum space 175
2. Cutoff of dissipative effects 175
3. Smearing of the critical fields H1 and H2 176
4. Gauss-ampere characteristics (experiment) 177
5. Nonequilibrium nature of the distribution in crossed fields 177
6. Hole inversion in germanium 178
7. Alternating fields 179
References 179

PACS: 72.20.Jv, 72.20.My, 72.20.Dp (all)
DOI: 10.1070/PU1983v026n02ABEH004324
URL: https://ufn.ru/en/articles/1983/2/e/
Citation: Levinson I B "Trap trajectories and the cutoff of dissipative effects in semiconductors" Sov. Phys. Usp. 26 176–181 (1983)
BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks
RT Journal
T1 Trap trajectories and the cutoff of dissipative effects in semiconductors
A1 Levinson,I.B.
PB Physics-Uspekhi
PY 1983
FD 10 Feb, 1983
JF Physics-Uspekhi
JO Phys. Usp.
VO 26
IS 2
SP 176-181
DO 10.1070/PU1983v026n02ABEH004324
LK https://ufn.ru/en/articles/1983/2/e/

Оригинал: Левинсон И Б «Траектории-ловушки и срыв диссипативных эффектов в полупроводниках» УФН 139 347–355 (1983); DOI: 10.3367/UFNr.0139.198302f.0347

© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions