Self-stabilized avalanche process in a metal-dielectric-semiconductor (MDS) structure. Avalanche MDS photodetectors

N.G. Basov^a, A.B. Kravchenko, A.F. Plotnikov, V.É. Shubin
^aLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

PACS: 01.10.Fv
DOI: 10.1070/PU1981v024n08ABEH004855
URL: https://ufn.ru/en/articles/1981/8/k/
Citation: Basov N G, Kravchenko A B, Plotnikov A F, Shubin V É "Self-stabilized avalanche process in a metal-dielectric-semiconductor (MDS) structure. Avalanche MDS photodetectors" Sov. Phys. Usp. 24 728–729 (1981)

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Оригинал: Басов Н Г, Кравченко А Б, Плотников А Ф, Шубин В Э «Самостабилизированный лавинный процесс в структуре металл — диэлектрик — полупроводник (МДП). Лавинные МДП-фотоприемники» УФН 134 748–750 (1981); DOI: 10.3367/UFNr.0134.198108l.0748

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