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Глубокие и резонансные состояния в полупроводниках типа AIVBVI

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В обзоре изложены результаты экспериментальных и теоретических работ, посвященных обнаружению и исследованию глубоких уровней, связанных с примесями и собственными дефектами в полупроводниках типа AIVBV I. Наиболее детально обсуждаются примеси III группы. Эксперименты (электрофизические, оптические, теплофизические) свидетельствуют о существовании локализованных и резонансных состояний в материалах, легированных индием и таллием, а также (менее однозначно) галлием и алюминием. При легировании индием особенно ярко проявляется стабилизация химического потенциала, приводящая к исключительно высокой электрической однородности образцов, обнаружена долговременная релаксация концентрации неравновесных электронов. Уровень Ферми существенно изменяется с составом материала, температурой, давлением. При легировании таллием обнаружены сильное резонансное рассеяние дырок, электронная примесная теплоемкость и сверхпроводимость, обусловленные наличием резонансных состояний. Сделан обзор теоретических и экспериментальных данных о локализованных и резонансных состояниях, связанных с вакансиями и комплексами собственных дефектов, а также с примесями переходных металлов, висмута, кадмия, олова, германия. Обсуждаются генезис уровней, энергия взаимодействия электронов на примесном центре, механизмы релаксации, сверхпроводимости. Табл. 1, ил. 18, библиогр. ссылок 121 (133 назв.).

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English fulltext is available at DOI: 10.1070/PU1985v028n01ABEH003632
PACS: 71.55.−i, 71.20.Nr, 61.72.Ji, 72.20.My, 65.40.Ba (все)
DOI: 10.3367/UFNr.0145.198501b.0051
URL: https://ufn.ru/ru/articles/1985/1/b/
Цитата: Кайданов В И, Равич Ю И "Глубокие и резонансные состояния в полупроводниках типа AIVBVI" УФН 145 51–86 (1985)
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English citation: Kaidanov V I, Ravich Yu I “Deep and resonance states in AIV BVI semiconductors” Sov. Phys. Usp. 28 31–53 (1985); DOI: 10.1070/PU1985v028n01ABEH003632

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