Gennadii Mikhailovich Gusev
Email: gusev@if.usp.br
Universidade de São Paulo, Instituto de Física
Address: São Paulo, Brazil
Phone: +55 (11) 3814 0503
Fax: +55 (11) 3814 0503
Website:
Email: if@edu.usp.br
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation
Phone: +7 (383) 333 27 66
Fax: +7 (383) 333 27 71
Website:
Email: ifp@isp.nsc.ru
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Accepted articles
- G.M. Gusev, Z.D. Kvon, A.D. Levin et al “Thermopower in HgTe-based topological insulators and two-dimensional semimetals” Phys. Usp., accepted
Articles
- Z.D. Kvon, D.A. Kozlov, E.B. Olshanetsky et al “Topological insulators based on HgTe” Phys. Usp. 63 629–647 (2020)
- Z.D. Kvon, E.B. Olshanetskii, G.M. Gusev et al “Coulomb-like mesoscopic conductance fluctuations in a 2D electron gas near the filling factor ν = 1/2” Phys. Usp. 41 164–166 (1998)
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See also:
Z.D. Kvon,
E.B. Olshanetskii,
N.N. Mikhailov,
S.A. Dvoretskii,
D.A. Kozlov,
J.C. Portal,
D.K. Maude
PACS: 73.43.Qt, 73.63.Hs, 05.45.+b, 73.40.Gk
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