Irina Veniaminovna Antonova

Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation
Phone: +7 (383) 333 27 66
Fax: +7 (383) 333 27 71
Website: www.isp.nsc.ru

Novosibirsk State Technical University
Address: pr. K. Marksa 20, Novosibirsk, 630092, Russian Federation
Phone: +7 (3832) 46 50 01
Fax: +7 (3832) 46 02 09, +7 (3832) 4
Website: www.nstu.nsk.su

Articles

I.V. Antonova, A.I. Ivanov “Wearable noninvasive glucose sensors based on graphene and other carbon materials” Phys. Usp. 67 487–509 (2024)
I.V. Antonova “Straintronics of 2D inorganic materials for electronic and optical applications” Phys. Usp. 65 567–596 (2022)
I.V. Antonova “2D printing technologies using graphene based materials” Phys. Usp. 60 204–218 (2017)
I.V. Antonova “Chemical vapor deposition growth of graphene on copper substrates: current trends” Phys. Usp. 56 1013–1020 (2013)