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Irina Veniaminovna Antonova



Email: antonova@isp.nsc.ru

Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation
Phone: +7 (383) 333 27 66
Fax: +7 (383) 333 27 71
Website:
Email: ifp@isp.nsc.ru

Novosibirsk State Technical University
Address: pr. K. Marksa 20, Novosibirsk, 630092, Russian Federation
Phone: +7 (3832) 46 50 01
Fax: +7 (3832) 46 02 09, +7 (3832) 4
Website:
Email: rector@nstu.ru

Articles

Citations
1 I.V. Antonova, A.I. Ivanov “Wearable noninvasive glucose sensors based on graphene and other carbon materials” Phys. Usp. 67 487–509 (2024) 2
2 I.V. Antonova “Straintronics of 2D inorganic materials for electronic and optical applications” Phys. Usp. 65 567–596 (2022) 10
3 I.V. Antonova “2D printing technologies using graphene based materials” Phys. Usp. 60 204–218 (2017) 17
4 I.V. Antonova “Chemical vapor deposition growth of graphene on copper substrates: current trends” Phys. Usp. 56 1013–1020 (2013) 25

54
I.V. Antonova: total citation number of the papers published in Phys. Usp.

See also: A.I. Ivanov

PACS: 68.65.Pq, 07.07.Df, 87.19.xv, 87.85.fk, 68.60.Bs, 72.80.Vp, 73.40.-c, 77.65.Ly, 73.61.-r, 79.60.Jv, 81.05.ue, 81.15.Gh, 81.16.Be
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