M. Ichikawa



Quantum-Phase Electronics Center, Department of Applied Physics, The University of Tokyo and Japan Science and Technology Agency, CREST
Address: 7-3-1 Hongo, Tokyo, 113-8656, Japan


Articles

  1. A.A. Shklyaev, M. Ichikawa “Extremely dense arrays of germanium and silicon nanostructuresPhys. Usp. 51 133–161 (2008)
  2. A.A. Shklyaev, M. Ichikawa “Fabrication of germanium and silicon nanostructures using a scanning tunneling microscopePhys. Usp. 49 887–903 (2006)

See also: A.A. Shklyaev

PACS: 78.55.Ap, 81.07.-b, 81.16.-c, 68.37.Ef, 79.70.+q, 81.16.Ta

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