S.L. Andrianova,
E.Yu. Gracheva,b,
A.A. Trubitsyna,b aJSC Nanotronica, Panfilovsky prosp., build. 10, off. 571, Moscow, Zelenograd, 124460, Russian Federation bRyazan State Radio Engineering University named after V.F. Utkin, Gagarina Street 59/1, Ryazan, 390005, Russian Federation
This article provides an overview of technical means for inspecting defects arising during the development and production of modern electronic chips. The reasons for the transition from optical methods to electron-optical inspection are demonstrated. A brief operating methodology for inspection systems is presented, along with a description of the key components of the electron-optical column and their impact on the final technical characteristics of the systems. Aspects of upgrading the electron-optical system of a scanning electron microscope for the needs of defect inspection of integrated circuits are discussed.
Keywords: microelectronics, integrated circuit inspection, scanning electron microscopy, charge particles beams PACS:07.78.+s, 07.50.−e () DOI: Citation: Andrianov S L, Grachev E Yu, Trubitsyn A A "Electron beam inspection of semiconductor wafers" Phys. Usp., accepted
Received: 19th, May 2026, revised: 8th, September 2026, accepted: 14th, September 2026