Infrared photoconductivity of chalcogen-doped silicon

M.S. Kovalev^†^a, I.M. Podlesnykh^a, R.I. Batalov^a, b, S.I. Kudryashov^a
^aLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
^bZavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Sibirskii trakt 10/7, Kazan, Республика Татарстан, 420029, Russian Federation

Hyperdoping is the incorporation of impurities into semiconductors with concentrations exceeding the equilibrium solubility by orders of magnitude (∼ 10²⁰ cm^-3). It opens the way to the formation of impurity bands in the silicon band gap. The chalcogens' (S, Se, Te) incorporation allows to achieve enhanced absorption coefficient (10²—10⁴cm^-1) in the infrared range (1—6 μm) due to subband transitions. The review covers the mechanisms of formation of impurity states, synthesis methods (ion implantation, laser processing), as well as structural, electrical, and optical properties. A special focus is on the application in infrared photodetectors operating at room temperature and solving instability problems (segregation, defects) through annealing optimization, selective doping, and heterostructures.

Correspondence should be addressed to
Keywords: silicon, chalcogens, doping, ion implantation, pulsed laser annealing, melting, crystallization, deep levels, impurity band, photodetector
PACS: 71.55.−i
DOI: 10.3367/UFNe.2025.12.040077
URL: https://ufn.ru/en/articles/2026/6/b/
Citation: Kovalev M S, Podlesnykh I M, Batalov R I, Kudryashov S I "Infrared photoconductivity of chalcogen-doped silicon" Phys. Usp. 69 563–574 (2026)

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Received: 16th, September 2025, revised: 16th, December 2025, accepted: 17th, December 2025

Оригинал: Ковалев М С, Подлесных И М, Баталов Р И, Кудряшов С И «Инфракрасная фотопроводимость кремния, легированного халькогенами» УФН 196 601–614 (2026); DOI: 10.3367/UFNr.2025.12.040077

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