The fundamental physical principles underlying the operation of basic elements of spintronics are considered, including the giant magnetoresistance effect, injection of spin-polarized charge carriers from a magnetized ferromagnetic contact, and radiative recombination in semiconductors involving spin-polarized carriers. An integrated GaAs-based structure implementing all of the above phenomena, a magnetoresistive spin light-emitting diode, has been fabricated and investigated. As an electrical circuit, the device under consideration is a magnetoresistive element and a metal/tunnel-thin dielectric/semiconductor light-emitting diode connected in series. It is shown that a magnetic field directed in the plane of the layers changes the state of the magnetoresistive element (high or low resistance) and thus allows controlling the intensity of electroluminescence. A magnetic field directed perpendicular to the plane of the layers ensures magnetization of the magnetic contact of the light-emitting diode and spin injection, accompanied by the emission of circularly polarized light. The resulting device can find itself in four stable magnetic states (high-low intensity, 'positive'—'negative' circular polarization). Such a structure can serve as a basis for magnetic recording and information transmission elements, in which four stable states form quaternary instead of binary logic.
Keywords: spintronics, spin injection, spin transport, magnetically controlled LEDs, spin light-emitting diodes, magnetoresistive elements PACS:85.70.Sq DOI: URL: https://ufn.ru/en/articles/2025/5/d/ 001524725300003 2-s2.0-105009283854 2025PhyU...68..512D Citation: Dorokhin M V, Ved’ M V, Demina P B, Kuznetsov Yu M, Kudrin A V, Zdoroveyshchev A V, Zdoroveyshchev D A, Baidus N V, Kalentyeva I L "Magnetically controlled spin light-emitting diode" Phys. Usp.68 512–524 (2025)
Medline
PT Journal Article
TI Magnetically controlled spin light-emitting diode
AU Dorokhin M V
FAU Dorokhin MV
AU Ved’ M V
FAU Ved’ MV
AU Demina P B
FAU Demina PB
AU Kuznetsov Yu M
FAU Kuznetsov YM
AU Kudrin A V
FAU Kudrin AV
AU Zdoroveyshchev A V
FAU Zdoroveyshchev AV
AU Zdoroveyshchev D A
FAU Zdoroveyshchev DA
AU Baidus N V
FAU Baidus NV
AU Kalentyeva I L
FAU Kalentyeva IL
DP 10 May, 2025
TA Phys. Usp.
VI 68
IP 5
PG 512-524
RX 10.3367/UFNe.2025.03.039886
URL https://ufn.ru/en/articles/2025/5/d/
SO Phys. Usp. 2025 May 10;68(5):512-524
Received: 3rd, September 2024, revised: 22nd, January 2025, accepted: 17th, March 2025
Оригинал: Дорохин М В, Ведь М В, Дёмина П Б, Кузнецов Ю М, Кудрин А В, Здоровейщев А В, Здоровейщев Д А, Байдусь Н В, Калентьева И Л «Магнитоуправляемый спиновый светоизлучающий диод» УФН195 543–556 (2025);