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Superradiant quantum phase transition in a semiconductor at room temperature: myth or reality?

 
Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

The paper examines the conditions for and mechanism of the onset of a nonequilibrium superradiant phase transition in a bulk semiconductor at room temperature in the strong coupling regime. Experimental data are analyzed, and the characteristic properties of this phase transition are compared with previously studied quantum phase transitions in ultracold gases in traps, ensembles of quantum dots, superconducting qubits, and some others. All the basic properties of the previously discovered collective state formed in the process of induced condensation of electron-hole pairs at room temperature are shown to correspond to those of the superradiant phase transition observed in other media.

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Fulltext is also available at DOI: 10.3367/UFNe.2024.10.039772
Keywords: phase transitions, superradiance, strong coupling, femtosecond pulses
PACS: 42.50.Nn, 64.70.Tg, 73.43.Nq (all)
DOI: 10.3367/UFNe.2024.10.039772
URL: https://ufn.ru/en/articles/2025/5/e/
Citation: Vasil’ev P P "Superradiant quantum phase transition in a semiconductor at room temperature: myth or reality?" Phys. Usp. 68 525–531 (2025)
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Received: 7th, May 2024, revised: 3rd, October 2024, 9th, October 2024

Оригинал: Васильев П П «Сверхизлучающий квантовый фазовый переход в полупроводнике при комнатной температуре: миф или реальность?» УФН 195 557–564 (2025); DOI: 10.3367/UFNr.2024.10.039772

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