Technologies of silicon integrated photonics are the basis for the fabrication of a class of devices, such as optical modulators, photodetectors, optical filters and switches, multiplexers and demultiplexers, and optical transceivers. In many respects, silicon integrated photonics competes with alternative platforms based on indium phosphide, silicon nitride and dioxide, and other platforms. Here we provide an overview of modern approaches used in silicon integrated photonic technologies, describe the components of photonic integrated circuits and devices developed on their basis, and make a comparison with alternative technology platforms.

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Keywords: silicon, integrated photonics, nanophotonics, silicon-on-insulator, photonic integrated circuits PACS: 42.82.−m, 42.82.Et, 84.40.Lj (all) DOI: 10.3367/UFNe.2024.09.039762 URL: https://ufn.ru/en/articles/2024/11/j/ Citation: Kosolobov S S, Pshenichnyuk I A, Taziev K R, Zemtsova A K, Zemtsov D S, Smirnov A S, Zhigunov D M, Drachev V P "Silicon integrated photonics" Phys. Usp. 67 (11) (2024) Received: 15th, April 2024, revised: 12th, September 2024, accepted: 13th, September 2024 Оригинал: Косолобов С С, Пшеничнюк И А, Тазиев К Р, Земцова А К, Земцов Д С, Смирнов А С, Жигунов Д М, Драчев В П «Кремниевая интегральная фотоника» УФН 194 1223–1239 (2024); DOI: 10.3367/UFNr.2024.09.039762