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Issue 12, 2024
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55th anniversary of the Institute of Spectroscopy of the Russian Academy of Sciences (ISAN). Reviews of topical problems


Silicon integrated photonics

† , ‡ , § , * , # , ° , & ,  
Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30, bld. 1, Moscow, 121205, Russian Federation

Technologies of silicon integrated photonics are the basis for the fabrication of a class of devices, such as optical modulators, photodetectors, optical filters and switches, multiplexers and demultiplexers, and optical transceivers. In many respects, silicon integrated photonics competes with alternative platforms based on indium phosphide, silicon nitride and dioxide, and other platforms. Here we provide an overview of modern approaches used in silicon integrated photonic technologies, describe the components of photonic integrated circuits and devices developed on their basis, and make a comparison with alternative technology platforms.

Typically, an English full text is available in about 1 month from the date of publication of the original article.

Keywords: silicon, integrated photonics, nanophotonics, silicon-on-insulator, photonic integrated circuits
PACS: 42.82.−m, 42.82.Et, 84.40.Lj (all)
DOI: 10.3367/UFNe.2024.09.039762
URL: https://ufn.ru/en/articles/2024/11/j/
Citation: Kosolobov S S, Pshenichnyuk I A, Taziev K R, Zemtsova A K, Zemtsov D S, Smirnov A S, Zhigunov D M, Drachev V P "Silicon integrated photonics" Phys. Usp. 67 (11) (2024)

Received: 15th, April 2024, revised: 12th, September 2024, 13th, September 2024

Оригинал: Косолобов С С, Пшеничнюк И А, Тазиев К Р, Земцова А К, Земцов Д С, Смирнов А С, Жигунов Д М, Драчев В П «Кремниевая интегральная фотоника» УФН 194 1223–1239 (2024); DOI: 10.3367/UFNr.2024.09.039762

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