Terahertz probing of topological insulators: photoelectric effects

A.V. Galeeva^a, A.S. Kazakov^a, D.R. Khokhlov^†^a, b
^aLomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
^bLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

The paper presents a review of the possibilities offered by the study of photoelectric effects in 3D topological insulators and a number of other topologically nontrivial materials under terahertz radiation excitation. We show that, in some cases, the information about the electronic states obtained by such experiments is unique.

Keywords: terahertz radiation, photoelectric effects, photogalvanic effect, photoelectromagnetic effect, photoconductivity
PACS: 72.40.+w, 78.20.−e, 78.56.−a (all)
DOI: 10.3367/UFNe.2023.12.039610
URL: https://ufn.ru/en/articles/2024/10/b/
Citation: Galeeva A V, Kazakov A S, Khokhlov D R "Terahertz probing of topological insulators: photoelectric effects" Phys. Usp. 67 988–999 (2024)

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Received: 16th, October 2023, revised: 20th, November 2023, accepted: 2nd, December 2023

Оригинал: Галеева А В, Казаков А С, Хохлов Д Р «Терагерцовое зондирование топологических изоляторов: фотоэлектрические эффекты» УФН 194 1046–1058 (2024); DOI: 10.3367/UFNr.2023.12.039610