Terahertz probing of topological insulators: photoelectric effects
A.V. Galeevaa,
A.S. Kazakova,
D.R. Khokhlov†a,b aLomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation bLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
The paper presents a review of the possibilities offered by the study of photoelectric effects in 3D topological insulators and a number of other topologically nontrivial materials under terahertz radiation excitation. We show that, in some cases, the information about the electronic states obtained by such experiments is unique.
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Keywords: terahertz radiation, photoelectric effects, photogalvanic effect, photoelectromagnetic effect, photoconductivity PACS:72.40.+w, 78.20.−e, 78.56.−a (all) DOI:10.3367/UFNe.2023.12.039610 URL: https://ufn.ru/en/articles/2024/10/b/ Citation: Galeeva A V, Kazakov A S, Khokhlov D R "Terahertz probing of topological insulators: photoelectric effects" Phys. Usp.67 (10) (2024)
Received: 16th, October 2023, revised: 20th, November 2023, accepted: 2nd, December 2023