RSS feeds
РусскийEnglish
Issue 4, 2024
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

2020

 / 

January

←  →

Conferences and symposia


Diffraction limited X-ray optics: technology, metrology, applications

, , , , ,
Institute for Physics of Microstructures, Russian Academy of Sciences, ul. Ul'yanova 46, Nizhnii Novgorod, 603950, Russian Federation

Progress in the fabrication technology of normal incidence multilayer interference mirrors permits the traditional optical methods of microscopy, astronomy and lithography to be transferred to the vacuum ultraviolet (VUV, wavelength: 10—200 nm) and the long-wavelength part of soft X-ray (SXR, wavelength: 2—10 nm) ranges. Due to the short wavelength and properties of interaction with the substance, the radiation of these ranges provides unique opportunities in nanophysics, nanotechnology, and nanodiagnostics of matter. To use the potential of a short wavelength in full, diffraction-limited optics is required. Compared to traditional optics, its accuracy must be at least two orders of magnitude higher. The article provides an analysis of the real capabilities of traditional methods of making and studying precision optical elements, reports on the methods of fabrication and characterization of diffraction-limited optics for the VUV and SXR ranges developed at IPM RAS. Examples of the use of this optics for the tasks of extraterrestrial astronomy, X-ray microscopy and lithography are given.

Fulltext pdf (1.7 MB)
Fulltext is also available at DOI: 10.3367/UFNe.2019.05.038601
Keywords: multilayer X-ray mirror, diffraction quality optics, interferometry, aspherical surface, ion etching, roughness, X-ray microscopy, astronomy, lithography
PACS: 06.30.−k
DOI: 10.3367/UFNe.2019.05.038601
URL: https://ufn.ru/en/articles/2020/1/f/
000537855600006
2-s2.0-85085103717
2020PhyU...63...67C
Citation: Chkhalo N I, Malyshev I V, Pestov A E, Polkovnikov V N, Salashchenko N N, Toropov M N "Diffraction limited X-ray optics: technology, metrology, applications" Phys. Usp. 63 67–82 (2020)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Received: 4th, July 2019, 22nd, May 2019

Оригинал: Чхало Н И, Малышев И В, Пестов А Е, Полковников В Н, Салащенко Н Н, Торопов М Н «Рентгеновская оптика дифракционного качества: технология, метрология, применения» УФН 190 74–91 (2020); DOI: 10.3367/UFNr.2019.05.038601

References (162) ↓ Cited by (14) Similar articles (17)

  1. Kirz J, Jacobsen S, Howells M Q. Rev. Biophys. 28 33 (1995)
  2. Wu B, Kumar A Appl. Phys. Rev. 1 011104 (2014)
  3. Golub L et al Nature 344 842 (1990)
  4. Gorbunov G G i dr Opticheskii Zhurn. 76 (10) 75 (2009); Gorbunov G G et al J. Opt. Technol. 76 651 (2009)
  5. Akopov A K i dr Kosmonavtika Raketostroenie (5) 77 (2014)
  6. Hoffman S, Giallorenzi T G, Slater L B Appl. Opt. 54 F268 (2015)
  7. Erko A et al (Eds) Modern Developments In X-Ray And Neutron Optics (Berlin: Springer, 2008) p. 533
  8. Berglund M et al J. Microsc. 197 268 (2000)
  9. Legall H et al Opt. Express 20 18362 (2012)
  10. Wachulak P W et al Opt. Express 19 9541 (2011)
  11. Takman P A C et al J. Microsc. 226 175 (2007)
  12. Bertilson M et al Opt. Express 17 11057 (2009)
  13. Rehbein S et al Phys. Rev. Lett. 103 110801 (2009)
  14. Vinogradov A V i dr Zerkal’naya Rentgenovskaya Optika (L.: Mashinostroenie, 1989)
  15. Platonov Y et al Proc. SPIE 8076 80760N (2011)
  16. Akhsakhalyan A D i dr Poverkhnost’ (1) 5 (2017)
  17. Huang Q et al Appl. Phys. Rev. 4 011104 (2017)
  18. Attwood D, Sakdinawat B A X-Rays And Extreme Ultraviolet Radiation (Cambridge: Cambridge Univ. Press, 2017)
  19. Williamson D M, Zernike E F, Attwood D T OSA Proc. Extreme Ultraviolet Lithography 23 68 (1995)
  20. Dinger U et al Proc. SPIE 4146 35 (2000)
  21. Oshino T et al Proc. SPIE 5037 75 (2003)
  22. Chkhalo N I et al Appl. Opt. 55 619 (2016)
  23. Voznesensky N, Zhevlakov A Proc. SPIE 5482 136 (2004)
  24. Tan J et al Opt. Lett. 39 6699 (2014)
  25. Malacara D Optical Shop Testing (New York: John Wiley and Sons, 1992)
  26. Zygo Corporation, http://www.zygo.com
  27. Linnik V P Izv. AN SSSR 1 210 (1933); Linnik V P Bull. Acad. Sci. USSR 1 208 (1933)
  28. Goldberg K A et al J. Vac. Sci. Technol. 20 2834 (2002)
  29. Sommargren G E Laser Focus World 8 61 (1996)
  30. Naulleau P P et al Appl. Opt. 38 7252 (1999)
  31. Otaki K et al J. Vac. Sci. Technol. B 20 2449 (2002)
  32. Voznesenskii N B i dr Zh. Tekh. Fiz. 77 (2) 126 (2007); Voznesensky N B et al Tech. Phys. 52 271 (2007)
  33. Zheng M et al Chinese Opt. Lett. 15 101203 (2017)
  34. Salashchenko N N, Toropov M N, Chkhalo N I Poverkhnost’ (7) 3 (2008)
  35. Chkhalo N I et al Proc. SPIE 7025 702507 (2008)
  36. Salashchenko N N, Toropov M N, Chkhalo N I Izv. RAN. Ser. Fiz. 74 62 (2010); Salashchenko N N, Toropov M N, Chkhalo N I Bull. Russ. Acad. Sci. Phys. 74 53 (2010)
  37. Chkhalo N I et al Rev. Sci. Instrum. 79 033107 (2008)
  38. Chkhalo N I et al Lithography (Ed. M Wang) (London: INTECH, 2010) p. 71
  39. Barysheva M M i dr Usp. Fiz. Nauk 182 727 (2012); Barysheva M M et al Phys. Usp. 55 681 (2012)
  40. Blunt R Proc. of the CEMANTECH Conf., Vancouver, Canada, April 24 - 27, 2006 p. 59
  41. Griffith J E, Grigg D A J. Appl. Phys. 74 R83 (1993)
  42. Azarova V V i dr Opticheskii Zhurn. 69 (2) 71 (2002); Azarova V V et al J. Opt. Technol. 69 125 (2002)
  43. Martínez-Galarce D et al Opt. Eng. 52 095102 (2013)
  44. Barysheva M M i dr Izv. RAN. Ser. Fiz. 75 71 (2011); Barysheva M M et al Bull. Russ. Acad. Sci. Phys. 75 67 (2011)
  45. Chkhalo N I et al Opt. Express 22 20094 (2014)
  46. Barysheva M M et al Proc. SPIE 8076 80760M (2011)
  47. Barysheva M M et al Fundamentals Of Picoscience (Ed. K D Sattler) (Boca Raton, Fl.: CRC Press. Taylor and Francis Group, 2013) p. 595
  48. Holý V, Baumbach T Phys. Rev. B 49 10668 (1994)
  49. Kozhevnikov I V, Pyatakhin M V J. X-Ray Sci. Technol. 8 253 (2000)
  50. Asadchikov V E et al Nucl. Instrum. Meth. Phys. Res. A 530 575 (2004)
  51. Chkhalo N I, Salashchenko N N, Zorina M V Rev. Sci. Instrum. 86 016102 (2015)
  52. Barysheva M M i dr Nanofizika i Nanoelektronika. Trudy XV Mezhdunarodnogo Simpoziuma, 14 - 18 2011 G., Nizhnii Novgorod Vol. 1 (Nizhnii Novgorod: Institut fiziki mikrostruktur RAN, 2011) p. 85
  53. Svechnikov M V et al Opt. Lett. 40 159 (2015)
  54. Mahajan V N, Dai G M J. Opt. Soc. Am. A 24 2994 (2007)
  55. Svechnikov M V et al Opt. Express 23 14677 (2015)
  56. Karger A M Appl. Opt. 12 451 (1973)
  57. Eisenberg N P, Carouby R, Broder J Proc. SPIE 1038 279 (1988)
  58. Eklund E R et al Phys. Rev. Lett. 67 1759 (1991)
  59. Ellison J F et al Proc. SPIE 8860 88600O (2013)
  60. Liao W et al Opt. Express 22 377 (2014)
  61. Inaba T et al Microelectron. Eng. 86 497 (2009)
  62. Makeev M A, Cuerno R, Barabasi A-L Nucl. Instrum. Meth. Phys. Res. B 197 185 (2002)
  63. Chkhalo N I et al Nucl. Instrum. Meth. Phys. Res. A 603 62 (2009)
  64. Barysheva M M i dr Izv. RAN. Ser. Fiz. 76 190 (2012); Barysheva M M et al Bull. Russ. Acad. Sci. Phys. 76 163 (2012)
  65. Chkhalo N I et al Appl. Opt. 55 1249 (2016)
  66. Chkhalo N I et al Proc. SPIE 8076 80760P (2011)
  67. Ziegler E et al Nucl. Instrum. Meth. Phys. Res. A 616 188 (2010)
  68. Chen S et al Appl. Opt. 54 1478 (2015)
  69. Chkhalo N I et al Appl. Opt. 57 6911 (2018)
  70. Sidorov D S et al Nucl. Instrum. Meth. Phys. Res. B 387 73 (2016)
  71. Chkhalo N I Surf. Coat. Tech. 311 351 (2017)
  72. Chkhalo N I et al Appl. Opt. 58 3652 (2019)
  73. Chkhalo N I et al Proc. SPIE 10235 102350M (2017)
  74. Endo H et al Microelectron. Eng. 87 982 (2010)
  75. Cherezova L A, Mikhailov A V, Zhevlakov A P Opticheskii Zhurn. 73 (11) 86 (2006); Cherezova L A, Mikhailov A V, Zhevlakov A P J. Opt. Technol. 73 812 (2006)
  76. Xu M et al Appl. Opt. 54 8055 (2015)
  77. Weiser M Nucl. Instrum. Meth. Phys. Res. B 267 1390 (2009)
  78. Chkhalo N I et al Precision Eng. 48 338 (2017)
  79. Zhitnik I A i dr Trudy FIAN 195 19 (1989)
  80. Sobel’man I I i dr Pis’ma Astron. Zhurn. 22 604 (1996); Sobelman I I et al Astron. Lett. 22 539 (1996)
  81. Oraevskii V N, Sobel’man I I Pis’ma Astron. Zhurn. 28 457 (2002); Oraevsky V N, Sobelman I I Astron. Lett. 28 401 (2002)
  82. Kuzin S V i dr Astron. Vestnik 45 166 (2011); Kuzin S V et al Solar Syst. Res. 45 162 (2011)
  83. Andreev S S i dr Poverkhnost’ (1) 6 (2003)
  84. Kuzin S V i dr Izv. RAN. Ser. Fiz. 75 91 (2011); Kuzin S V et al Bull. Russ. Acad. Sci. Phys. 75 87 (2011)
  85. Malyshev I V Proc. SPIE 10235 102350C (2017)
  86. Wilson R N Reflecting Telescope Optics. I Basic Design Theory And Its Historical Development (Rohrbach: Springer Science and Business Media, 2013) p. 43
  87. Ponomarev D N Astronomicheskie Observatorii Sovetskogo Soyuza (M.: Nauka, 1987)
  88. Lew A et al NASA Technical Report NASA-TM-103443 (1990)
  89. Wilson R N, Delabore B Astron. Astrophys. 294 322 (1995)
  90. Brooks P Acta Astronautica 52 905 (2003)
  91. Middleton E M et al IEEE J. Sel. Top. Appl. Earth. Obs. Remote. Sens. 6 243 (2013)
  92. Korsch D Appl. Opt. 13 2005 (1974)
  93. Thales SESO. Space Optics, http://seso.com/new-services/space-optics/
  94. Baker J G Proc. Am. Phil. Soc. 82 339 (1940)
  95. Schmidt B Central Zeitung Opt. Mech. 52 25 (1931)
  96. Brychikhin M N et al Appl. Opt. 55 4430 (2016)
  97. Chkhalo N I et al J. Astron. Telescopes Instrum. Syst. 4 014003 (2018)
  98. Grigor’ev I S, Meilikhov E Z (Red.) Fizicheskie Velichiny. Spravochnik (M.: Energoatomizdat, 1991); Per. na angl. yaz., Grigoriev I S, Meilikhov E Z (Eds) Handbook Of Physical Quantities (Boca Raton, Fl.: CRC Press, 1997)
  99. Barnes W P Appl. Opt. 5 1883 (1966)
  100. Fanson J L et al Proc. SPIE 3356 478 (1998)
  101. Gildner D A, Marder J M Proc. SPIE 1485 46 (1991)
  102. Sizenev V S i dr Voprosy Atomnoi Nauki Tekhniki. Ser. Fizika Radiats. Povrezhd. Radiatsionnoe Materialovedenie (1) 21 (2010)
  103. Hashiguchi D, Marder J, Paquin R Adv. Mater. Process. 173 20 (2015)
  104. Berglund M et al J. Microscopy 197 268 (2000)
  105. Hanssen E. et al J. Struct. Biol. 177 224 (2012)
  106. Ayele M G et al Acta Phys. Polon. A 129 237 (2016)
  107. Wachulak P W et al J. Phys. Conf. Ser. 849 012050 (2017)
  108. Sage D et al Methods 115 28 (2017)
  109. http://www.nanotech-now.com/news.cgi?story_id=42612
  110. Baghaie A et al PLoS One 12 e0175078 (2017)
  111. Tafti A P et al Micron 78 54 (2015)
  112. Khalisov M M "Primenenie atomno-silovoi mikroskopii dlya detektirovaniya otklika nativnykh kletok na vneshnie vozdeistviya" Diss. ... kand. fiz.-mat. nauk (Spb.: Institut analiticheskogo priborostroeniya RAN, 2017)
  113. Dehlinger A et al Proc. SPIE 9589 95890 (2015)
  114. Kim K W et al Phys. Med. Biol. 51 N99 (2006)
  115. Chao W et al Opt. Express 20 9777 (2012)
  116. Weib D et al Ultramicroscopy 84 185 (2000)
  117. Artyukov I A i dr Kvantovaya Elektronika 22 951 (1995); Artyukov I A et al Quantum Electron. 25 919 (1995)
  118. Artyukov I A Zh. Eksp. Teor. Fiz. 136 1009 (2009); Artyukov I A JETP 109 872 (2009)
  119. Ejima T et al Opt. Express 18 7203 (2010)
  120. Panessa-Warren B J X-Ray Microscopy. Proc. of the Intern. Symp., Gottingen, Fed. Rep. of Germany, September 14 - 16, 1983 (Eds G Schmahl, D Rudolph) (Berlin: Springer-Verlag, 1984) p. 268
  121. Chkhalo N I et al Rev. Sci. Instrum. 86 063701 (2015)
  122. Malyshev I V Poverkhnost’ (1) 3 (2019)
  123. Andreev S S et al J. Synchrotron Radiat. 10 358 (2003)
  124. Bertilson M Opt. Lett. 36 2728 (2011)
  125. Malyshev I V et al Ultramicroscopy 202 76 (2019)
  126. Kim K et al Proc. SPIE 8326 832605 (2012)
  127. Scotten Jones (2018), https://seekingalpha.com/article/4151376-tsmc-intel-lead-semiconductor-processes
  128. Wood O et al Proc. SPIE 8322 832203 (2012)
  129. Neisser M, Wurm S Adv. Opt. Technol. 4 235 (2015)
  130. Turkot B, Phillips M Proc. of the Intern. Workshop on EUV and Soft X-Ray Sources, Dublin, 2015 p. 1; Turkot B, Phillips M http://www.euvlitho.com/2015/S1.pdf
  131. Kim S S et al Proc. SPIE 10143 1014306 (2017)
  132. Levinson H J Proc. of the Intern. Workshop on EUV Lithography, June 13-16, Berkeley CA, 2016 p. 1; Levinson H J http://www.euvlitho.com/2016/P1.pdf
  133. Wagner C, Harned N Nature Photon. 4 24 (2010)
  134. Koshelev K N, Banin V E, Salashchenko N N Usp. Fiz. Nauk 177 777 (2007); Koshelev K N, Banine V E, Salashchenko N N Phys. Usp. 50 741 (2007)
  135. Salashchenko N N, Chkhalo N I Vestnik RAN 78 450 (2008); Salashchenko N N, Chkhalo N I Herald Russ. Acad. Sci. 78 279 (2008)
  136. Chkhalo N I et al J. Micro/Nanolith. MEMS MOEMS 11 021123 (2012)
  137. Chkhalo N I et al J. Micro/Nanolith. MEMS MOEMS 11 021115 (2012)
  138. Chkhalo N I et al Opt. Lett. 42 5070 (2017)
  139. Menon R et al Mater. Today 8 (2) 26 (2005)
  140. Belokopytov G V, Ryzhikova Yu V Mikroelektronika 40 453 (2011)
  141. Mapper Lithography, https://mapper.nl/
  142. Servin I et al Proc. SPIE 9423 94231C (2015)
  143. Choksi N et al J. Vac. Sci. Technol. B 17 3047 (1999)
  144. Menon R, Patel A, Smith H I Proc. SPIE 5721 53 (2005)
  145. Chkhalo N I et al Proc. SPIE 102241 102241O1 (2016)
  146. Shroff Y A, Chen Y, Oldham W G Proc. SPIE 5374 637 (2004)
  147. Chen Y, Shroff Y Proc. SPIE 6151 61512D (2006)
  148. Chen Y Proc. SPIE 8323 83231Q (2012)
  149. Johnson K C J. Vac. Sci. Technol. B 30 051606 (2012)
  150. Chkhalo N et al J. Vac. Sci. Technol. B 35 062002 (2017)
  151. Texas Instruments, http://www.ti.com/lit/ds/symlink/dlp9000x.pdf
  152. Vinokhodov A Yu i dr Nanofizika i nanoelektronika. Trudy XXIII Mezhdunarodnogo simpoziuma, 11 - 14 2019 g., Nizhnii Novgorod Vol. 1 (Nizhnii Novgorod: Izd-vo Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo, 2019) p. 436
  153. Chkhalo N I et al AIP Adv. 8 105003 (2018)
  154. Svechnikov M V et al Opt. Express 26 33718 (2018)
  155. Shalashov A G et al Appl. Phys. Lett. 113 153502 (2018)
  156. Belik V P i dr Pis’ma ZhTF 43 (22) 10 (2017); Belik V P et al Tech. Phys. Lett. 43 1001 (2017)
  157. Salashchenko N N, Chkhalo N I, Dyuzhev N A Poverkhnost’ (10) 10 (2018)
  158. Basu A et al J. Phys. D 48 225501 (2015)
  159. Chkhalo N I et al Proc. SPIE 11022 110221M (2019)
  160. Lopatin A Ya i dr Zh. Eksp. Teor. Fiz. 154 1067 (2018); Lopatin A Ya et al JETP 127 985 (2018)
  161. Chkhalo N I, Salashchenko N N AIP Adv. 3 082130 (2013)
  162. Otsuka T et al Proc. SPIE 8322 832214 (2012)
© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions