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From the current literature


Transport mechanisms of electrons and holes in dielectric films

 a,  b
a Institute of Automation and Electrometry, Siberian Branch of the Russian Academy of Sciences, prosp. akad. Koptyuga 1, Novosibirsk, 630090, Russian Federation
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation

Electron and hole transport mechanisms in amorphous silicon oxide, silicon nitride and aluminum oxide, dielectric materials of high relevance to silicon device technology, are reviewed. It is established that the widely accepted Frenkel model provides a formal description of transport in trap-containing insulators, but to obtain quantitative agreement, nonphysical model parameters should be introduced. It is shown that the multiphonon ionization of traps is a good model to consistently describe charge transport in insulators with traps.

Fulltext pdf (740 KB)
Fulltext is also available at DOI: 10.3367/UFNe.0183.201310h.1099
PACS: 72.20.Ht, 72.20.Jv, 72.80.Sk, 73.40.Sx (all)
DOI: 10.3367/UFNe.0183.201310h.1099
URL: https://ufn.ru/en/articles/2013/10/c/
000329313100003
2013PhyU...56..999N
Citation: Nasyrov K A, Gritsenko V A "Transport mechanisms of electrons and holes in dielectric films" Phys. Usp. 56 999–1012 (2013)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Received: 4th, March 2013, 11th, June 2013

Îðèãèíàë: Íàñûðîâ Ê À, Ãðèöåíêî Â À «Ìåõàíèçìû ïåðåíîñà ýëåêòðîíîâ è äûðîê â äèýëåêòðè÷åñêèõ ïë¸íêàõ» ÓÔÍ 183 1099–1114 (2013); DOI: 10.3367/UFNr.0183.201310h.1099

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