Conferences and symposia

Spin relaxation anisotropy in two-dimensional semiconductors

Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

Spintronics (Scientific session of the Physical Sciences Division of the Russian Academy of Sciences, 3 February 2010).

Fulltext is available at IOP
PACS: 75.76.+j, 76.30.−v, 85.75.−d (all)
DOI: 10.3367/UFNe.0180.201007j.0777
Citation: Averkiev N S "Spin relaxation anisotropy in two-dimensional semiconductors" Phys. Usp. 53 742–745 (2010)
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RT Journal
T1 Spin relaxation anisotropy in two-dimensional semiconductors
A1 Averkiev,N.S.
PB Physics-Uspekhi
PY 2010
FD 10 Jul, 2010
JF Physics-Uspekhi
JO Phys. Usp.
VO 53
IS 7
SP 742-745
DO 10.3367/UFNe.0180.201007j.0777

Оригинал: Аверкиев Н С «Анизотропия спиновой релаксации в двумерных полупроводниках» УФН 180 777–780 (2010); DOI: 10.3367/UFNr.0180.201007j.0777

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