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Spin relaxation anisotropy in two-dimensional semiconductors


Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

Spintronics (Scientific session of the Physical Sciences Division of the Russian Academy of Sciences, 3 February 2010).

Fulltext is available at IOP
PACS: 75.76.+j, 76.30.−v, 85.75.−d (all)
DOI: 10.3367/UFNe.0180.201007j.0777
URL: https://ufn.ru/en/articles/2010/7/i/
Citation: Averkiev N S "Spin relaxation anisotropy in two-dimensional semiconductors" Phys. Usp. 53 742–745 (2010)
BibTex BibNote ® (generic)BibNote ® (RIS)MedlineRefWorks
%0 Journal Article
%T Spin relaxation anisotropy in two-dimensional semiconductors
%A N. S. Averkiev
%I Physics-Uspekhi
%D 2010
%J Phys. Usp.
%V 53
%N 7
%P 742-745
%U https://ufn.ru/en/articles/2010/7/i/
%U https://doi.org/10.3367/UFNe.0180.201007j.0777

Оригинал: Аверкиев Н С «Анизотропия спиновой релаксации в двумерных полупроводниках» УФН 180 777–780 (2010); DOI: 10.3367/UFNr.0180.201007j.0777

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