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Spin relaxation anisotropy in two-dimensional semiconductors


Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

Spintronics (Scientific session of the Physical Sciences Division of the Russian Academy of Sciences, 3 February 2010).

Fulltext is available at IOP
PACS: 75.76.+j, 76.30.−v, 85.75.−d (all)
DOI: 10.3367/UFNe.0180.201007j.0777
URL: https://ufn.ru/en/articles/2010/7/i/
Citation: Averkiev N S "Spin relaxation anisotropy in two-dimensional semiconductors" Phys. Usp. 53 742–745 (2010)
BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks
TY JOUR
TI Spin relaxation anisotropy in two-dimensional semiconductors
AU Averkiev, N. S.
PB Physics-Uspekhi
PY 2010
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 53
IS 7
SP 742-745
UR https://ufn.ru/en/articles/2010/7/i/
ER https://doi.org/10.3367/UFNe.0180.201007j.0777

Оригинал: Аверкиев Н С «Анизотропия спиновой релаксации в двумерных полупроводниках» УФН 180 777–780 (2010); DOI: 10.3367/UFNr.0180.201007j.0777

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