Conferences and symposia

Spin relaxation anisotropy in two-dimensional semiconductors

Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

Spintronics (Scientific session of the Physical Sciences Division of the Russian Academy of Sciences, 3 February 2010).

Fulltext is available at IOP
PACS: 75.76.+j, 76.30.−v, 85.75.−d (all)
DOI: 10.3367/UFNe.0180.201007j.0777
Citation: Averkiev N S "Spin relaxation anisotropy in two-dimensional semiconductors" Phys. Usp. 53 742–745 (2010)
BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks
PT Journal Article
TI Spin relaxation anisotropy in two-dimensional semiconductors
AU Averkiev N S
FAU Averkiev NS
DP 10 Jul, 2010
TA Phys. Usp.
VI 53
IP 7
PG 742-745
RX 10.3367/UFNe.0180.201007j.0777
SO Phys. Usp. 2010 Jul 10;53(7):742-745

Оригинал: Аверкиев Н С «Анизотропия спиновой релаксации в двумерных полупроводниках» УФН 180 777–780 (2010); DOI: 10.3367/UFNr.0180.201007j.0777

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