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Classification of Ge hut clusters in arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface

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Prokhorov General Physics Institute of the Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119942, Russian Federation

Ge hut clusters forming quantum dot arrays on the Si(001) surface in the process of low-temperature ultrahigh-vacuum molecular beam epitaxy are morphologicaly investigated and classified using in situ scanning tunnelling microscopy. It is found that two main Ge hut cluster types — pyramidal and wedge-shaped — have different atomic structures, and it is concluded that shape transitions between the two are impossible. Derivative cluster species — obelisks (or truncated wedges) and accreted wedges — are revealed and investigated for the first time and shown to start dominating at high Ge coverages. The uniformity of cluster arrays is shown to be controlled by the scatter in the length of wedge-like clusters. At low growth temperatures (360 °C), cluster nucleation during the growth of the array is observed for all values of Ge coverage except for a particular point at which the arrays are more uniform than at higher or lower coverages. At higher temperatures (530 °C), no cluster nucleation is observed after the initial formation of the array.

Fulltext is available at IOP
PACS: 68.37.Ef, 81.07.Ta, 81.15.Hi (all)
DOI: 10.3367/UFNe.0180.201003e.0289
URL: https://ufn.ru/en/articles/2010/3/d/
Citation: Arapkina L V, Yuryev V A "Classification of Ge hut clusters in arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface" Phys. Usp. 53 279–290 (2010)
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Оригинал: Арапкина Л В, Юрьев В А «Классификация hut-кластеров Ge в массивах, формируемых на поверхности Si(001) методом молекулярно-лучевой эпитаксии при низких температурах» УФН 180 289–302 (2010); DOI: 10.3367/UFNr.0180.201003e.0289

References (54) ↓ Cited by (27) Similar articles (1)

  1. Yur’ev V A i dr. "Razrabotka fiziko-tekhnologicheskikh osnov upravlyaemogo formirovaniya massivov plotnoupakovannykh nanoklasterov Ge na poverkhnosti kremniya Si(001) metodom sverkhvysokovakuumnoi molekulyarno-luchevoi epitaksii, shifr 2007-3-1.3-25-01-303" Otchet o nauchno-issledovatel’skoi rabote po gosudarstvennomu kontraktu ot 21 marta 2007 g. №02.513.11.3130 (ruk. V A Yur’ev) (M.: IOF RAN, 2007), Gos. reg. №0220.0802501
  2. Pchelyakov O P i dr. Fiz. Tekh. Poluprovodn. 34 1281 (2000); Pchelyakov O P et al. Semicond. 34 1229 (2000)
  3. Brunner K Rep. Prog. Phys. 65 27 (2002)
  4. Wang K L, Tong S, Kim H J Mater. Sci. Semicond. Process. 8 389 (2005)
  5. Smagina Zh V i dr. Zh. Eksp. Teor. Fiz. 133 593 (2008); Smagina J V et al. JETP 106 517 (2008)
  6. Wang K L et al. Proc. IEEE 95 1866 (2007)
  7. Liu F et al. J. Electron. Mater. 33 846 (2004)
  8. Tong S et al. Opt. Mater. 27 1097 (2005)
  9. Elkurdi M et al. Appl. Phys. Lett. 80 509 (2002)
  10. David S et al. Proc. SPIE 5450 369 (2004)
  11. Yakimov A I et al. Appl. Phys. Lett. 80 4783 (2002)
  12. Yakimov A I et al. Philos. Mag. B 65 701 (1992)
  13. Jin G, Liu J L, Wang K L Appl. Phys. Lett. 83 2847 (2003)
  14. Vescan L et al. J. Appl. Phys. 87 7275 (2000)
  15. Medeiros-Ribeiro G et al. Science 279 353 (1998)
  16. Mo Y-W et al. Phys. Rev. Lett. 65 1020 (1990)
  17. Vailionis A et al. Phys. Rev. Lett. 85 3672 (2000)
  18. Ross F M, Tromp R M, Reuter M C Science 286 1931 (1999)
  19. Yuryev V A, Arapkina L V Physica B 404 4719 (2009); Yuryev V A, Arapkina L V arXiv:0908.0841
  20. Tersoff J, Tromp R M Phys. Rev. Lett. 70 2782 (1993)
  21. Goldfarb I et al. Phys. Rev. Lett. 78 3959 (1997)
  22. J. Vac. Sci. Technol. A 16 1938 (1998)
  23. Jesson D E et al. Phys. Rev. Lett. 80 5156 (1998)
  24. Kästner M, Voigtländer B Phys. Rev. Lett. 82 2745 (1999)
  25. Goldfarb I Phys. Rev. Lett. 95 025501 (2005)
  26. Goldfarb I, Banks-Sills L, Eliasi R Phys. Rev. Lett. 97 206101 (2006)
  27. Jesson D E, Chen K M, Pennycook S J MRS Bull. 21 (4) 31 (1996)
  28. Liu F, Wu F, Lagally M G Chem. Rev. 97 1045 (1997)
  29. Stranski I N, Krastanow L "Zur Theorie der orientierten Ausscheidung von Ionenkristallen aufeinander" Sitz. Ber. Akad. Wiss. Wien, Mat. Nat. K1. IIb 146 797 (1937); Stranski I N, Krastanow L Monatshefte Chem. Chem. Mon. 71 351 (1937)
  30. Bauer E "Phänomenologische Theorie der Kristallabscheidung an Oberfläschen. I" Z. Kristallogr. 110 372 (1958); Bauer E "Phänomenologische Theorie der Kristallabscheidung an Oberfläschen. II" Z. Kristallogr. 110 395 (1958)
  31. Iwawaki F et al. Ultramicroscopy 42-44 895 (1992)
  32. Iwawaki F, Tomitori M, Nishikawa O Ultramicroscopy 42-44 902 (1992)
  33. Wu F et al. Phys. Rev. Lett. 74 574 (1995)
  34. Voigtländer B, Kästner M Phys. Rev. B 60 R5121 (1999)
  35. Migas D B et al. Phys. Rev. B 69 235318 (2004)
  36. Iwawaki F, Tomitori M, Nishikawa O Surf. Sci. Lett. 253 L411 (1991)
  37. Tersoff J, LeGoues F K Phys. Rev. Lett. 72 3570 (1994)
  38. Fujikawa Y, Sakurai T, Lagally M G Appl. Surf. Sci. 252 5244 (2006)
  39. Raiteri P et al. Phys. Rev. Lett. 88 256103 (2002)
  40. Medeiros-Ribeiro G et al. Phys. Rev. B 58 3533 (1998)
  41. Montalenti F et al. Phys. Rev. Lett. 93 216102 (2004)
  42. Li A, Liu F, Lagally M G Phys. Rev. Lett. 85 1922 (2000)
  43. Arapkina L V, Chizh K V, Yur’ev V A Rossiiskoe soveshchanie po aktual’nym problemam poluprovodnikovoi fotoelektroniki "Fotonika-2008", Novosibirsk, Akademgorodok, 19 - 23 avgusta 2008 g. (Pod red. A L Aseeva, A V Dvurechenskogo) (Novosibirsk: IFP SO RAN, 2008) p. 23; Arapkina L V, Yuryev VA arXiv:0907.4665; Arapkina L V, Yuryev VA arXiv:0908.0883
  44. Voigtländer B Surf. Sci. Rep. 43 127 (2001)
  45. Eltsov K "Ultrahigh vacuum scanning tunneling microscope SIM GPI-300" http://surface.gpi.ru/papers/gpi300e.pdf
  46. Kiryushina I V Diss. ... kand. tekhn. nauk (Zelenograd: OAO Mikron i NIIME, 2003)
  47. Arapkina L V, Shevlyuga V M, Yuryev V A Pis’ma ZhETF 87 247 (2008); Arapkina L V, Shevlyuga V M, Yuryev V A JETP Lett. 87 215 (2008)
  48. Arapkina L V, Yuryev V A, Shevlyuga V M 25th Intern. Conf. On Defects In Semiconductors (ICDS-25), St. Petersburg, Russia, 20 - 24 July 2009 (St. Petersburg: Ioffe Physico-Technical Institute, 2009) p. 348
  49. Eltsov K N et al. Phys. Low-Dim. Struct. 9/10 7 (1996)
  50. Horcas I et al. Rev. Sci. Instrum. 78 013705 (2007)
  51. Arapkina L V, Chizh K V, Shevlyuga V M, Yur’ev V A Rossiiskoe soveshchanie po aktual’nym problemam poluprovodnikovoi fotoelektroniki "Fotonika-2008", Novosibirsk, Akademgorodok, 19 - 23 avgusta 2008 g. (Pod red. A L Aseeva, A V Dvurechenskogo) (Novosibirsk: IFP SO RAN, 2008)
  52. Kucherenko I V i dr. Fiz. Tverd. Tela 50 1888 (2008); Kucherenko I V et al. Phys. Solid State 50 1970 (2008)
  53. Kucherenko I V et al. Proc. of the 16th Intern. Symp. "Nanostructures: Physics and Technology", Vladivostok, Russia, 14 - 18 July 2008 (St. Petersburg: Ioffe Physico-Technical Institute, 2008) p. 199; Kucherenko I V et al. arXiv:0908.1378
  54. Grützmacher D et al. Nano Lett. 7 3150 (2007)

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