RSS feeds
РусскийEnglish
Issue 11, 2024
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

2010

 / 

March

←  →

Instruments and methods of investigation


Classification of Ge hut clusters in arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface

,
Prokhorov General Physics Institute of the Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russian Federation

Ge hut clusters forming quantum dot arrays on the Si(001) surface in the process of low-temperature ultrahigh-vacuum molecular beam epitaxy are morphologicaly investigated and classified using in situ scanning tunnelling microscopy. It is found that two main Ge hut cluster types — pyramidal and wedge-shaped — have different atomic structures, and it is concluded that shape transitions between the two are impossible. Derivative cluster species — obelisks (or truncated wedges) and accreted wedges — are revealed and investigated for the first time and shown to start dominating at high Ge coverages. The uniformity of cluster arrays is shown to be controlled by the scatter in the length of wedge-like clusters. At low growth temperatures (360 °C), cluster nucleation during the growth of the array is observed for all values of Ge coverage except for a particular point at which the arrays are more uniform than at higher or lower coverages. At higher temperatures (530 °C), no cluster nucleation is observed after the initial formation of the array.

Fulltext pdf (1.7 MB)
Fulltext is also available at DOI: 10.3367/UFNe.0180.201003e.0289
PACS: 68.37.Ef, 81.07.Ta, 81.15.Hi (all)
DOI: 10.3367/UFNe.0180.201003e.0289
URL: https://ufn.ru/en/articles/2010/3/d/
000280435100004
2-s2.0-77954773542
2010PhyU...53..279A
Citation: Arapkina L V, Yuryev V A "Classification of Ge hut clusters in arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface" Phys. Usp. 53 279–290 (2010)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Арапкина Л В, Юрьев В А «Классификация hut-кластеров Ge в массивах, формируемых на поверхности Si(001) методом молекулярно-лучевой эпитаксии при низких температурах» УФН 180 289–302 (2010); DOI: 10.3367/UFNr.0180.201003e.0289

References (54) Cited by (33) ↓ Similar articles (1)

  1. Kukenov O I, Dirko V V et al J. Opt. Technol. 91 416 (2024)
  2. Arapkina L V, Chizh K V et al Applied Surface Science 608 155094 (2023)
  3. Sayari A, Servatkhah M, Pourmand R Opt Quant Electron 55 (1) (2023)
  4. Storozhevykh M S, Arapkina L V et al J Raman Spectroscopy 53 853 (2022)
  5. Arapkina L V, Chizh K V et al SSRN Journal (2022)
  6. Storozhevykh M S, Arapkina L V et al Semicond. Sci. Technol. 35 045012 (2020)
  7. Lozovoy K, Kokhanenko A, Voitsekhovskii A Nanotechnology 29 054002 (2018)
  8. van Bremen R, Bampoulis P et al 124 (12) (2018)
  9. (Nanotechnology VIII) Vol. Nanotechnology VIIISilicon-germanium and platinum silicide nanostructures for silicon based photonicsIon M.TiginyanuM. S.StorozhevykhV. P.DubkovL. V.ArapkinaK. V.ChizhS. A.MironovV. A.ChapninV. A.Yuryev10248 (2017) p. 102480O
  10. Lozovoy K A, Pishchagin A A et al J. Phys.: Conf. Ser. 741 012019 (2016)
  11. Storozhevykh M S, Arapkina L V, Yuryev V A J. Phys.: Conf. Ser. 690 012013 (2016)
  12. Storozhevykh M S, Arapkina L V, Yuryev V A Nanoscale Res Lett 10 (1) (2015)
  13. Lozovoy K A, Voytsekhovskiy A V et al Surface Science 619 1 (2014)
  14. Lozovoy K A, Kokhanenko A P, Voitsekhovskiy A V J. Phys.: Conf. Ser. 541 012084 (2014)
  15. Voitsekhovskii A V, Kokhanenko A P, Lozovoy K A Bull. Russ. Acad. Sci. Phys. 78 1058 (2014)
  16. Prokhorov A S, Zhukova E S et al Radiophys Quantum El 56 620 (2014)
  17. Lozovoy K, Voytsekhovskiy A et al 22 (3) (2014)
  18. Kuryliuk V V Ukr. J. Phys. 58 780 (2013)
  19. Arapkina L V, Yuryev V A Journal Of Applied Physics 114 104304 (2013)
  20. Roddatis V V, Yakunin S N et al J. Mater. Res. 28 1432 (2013)
  21. Kaniewska M, Engström O et al Solid-State Electronics 83 99 (2013)
  22. Arapkina L V, Krylova L A et al 112 (1) (2012)
  23. Arapkina L V, Yuryev V A 111 (9) (2012)
  24. Yuryev V A, Arapkina L V et al Nanoscale Res Lett 7 (1) (2012)
  25. Talochkin A B, Chistokhin I B J. Exp. Theor. Phys. 113 510 (2011)
  26. Arapkina L V, Yuryev V A Nanoscale Res Lett 6 (1) (2011)
  27. Yuryev V A, Arapkina L V Nanoscale Res Lett 6 (1) (2011)
  28. Arapkina L V, Yuryev V A et al Nanoscale Res Lett 6 (1) (2011)
  29. Arapkina L V, Yuryev V A 109 (10) (2011)
  30. Arapkina L V, Yuryev V A Jetp Lett. 91 281 (2010)
  31. Arapkina L V, Yuryev V A Phys. Rev. B 82 (4) (2010)
  32. Arapkina L V, Yuryev V A et al Jetp Lett. 92 310 (2010)
  33. Zhukova E S, Gorshunov B P et al Jetp Lett. 92 793 (2010)
© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions