Issues

 / 

2010

 / 

March

  

Instruments and methods of investigation


Classification of Ge hut clusters in arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface

,
Prokhorov General Physics Institute of the Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119942, Russian Federation

Ge hut clusters forming quantum dot arrays on the Si(001) surface in the process of low-temperature ultrahigh-vacuum molecular beam epitaxy are morphologicaly investigated and classified using in situ scanning tunnelling microscopy. It is found that two main Ge hut cluster types — pyramidal and wedge-shaped — have different atomic structures, and it is concluded that shape transitions between the two are impossible. Derivative cluster species — obelisks (or truncated wedges) and accreted wedges — are revealed and investigated for the first time and shown to start dominating at high Ge coverages. The uniformity of cluster arrays is shown to be controlled by the scatter in the length of wedge-like clusters. At low growth temperatures (360 °C), cluster nucleation during the growth of the array is observed for all values of Ge coverage except for a particular point at which the arrays are more uniform than at higher or lower coverages. At higher temperatures (530 °C), no cluster nucleation is observed after the initial formation of the array.

Fulltext is available at IOP
PACS: 68.37.Ef, 81.07.Ta, 81.15.Hi (all)
DOI: 10.3367/UFNe.0180.201003e.0289
URL: https://ufn.ru/en/articles/2010/3/d/
Citation: Arapkina L V, Yuryev V A "Classification of Ge hut clusters in arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface" Phys. Usp. 53 279–290 (2010)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Арапкина Л В, Юрьев В А «Классификация hut-кластеров Ge в массивах, формируемых на поверхности Si(001) методом молекулярно-лучевой эпитаксии при низких температурах» УФН 180 289–302 (2010); DOI: 10.3367/UFNr.0180.201003e.0289

References (54) Cited by (27) ↓ Similar articles (1)

  1. van Bremen R, Bampoulis P et al Journal Of Applied Physics 124 125301 (2018)
  2. Lozovoy K, Kokhanenko A, Voitsekhovskii A Nanotechnology 29 054002 (2018)
  3. (Nanotechnology VIII) Vol. Nanotechnology VIII Silicon-germanium and platinum silicide nanostructures for silicon based photonics Ion M.TiginyanuM. S.StorozhevykhV. P.DubkovL. V.ArapkinaK. V.ChizhS. A.MironovV. A.ChapninV. A.Yuryev10248 (2017) p. 102480O
  4. Storozhevykh M S, Arapkina L V, Yuryev V A J. Phys.: Conf. Ser. 690 012013 (2016)
  5. Lozovoy K A, Pishchagin A A et al J. Phys.: Conf. Ser. 741 012019 (2016)
  6. Storozhevykh M S, Arapkina L V, Yuryev V A Nanoscale Res Lett 10 (1) (2015)
  7. Lozovoy K A, Kokhanenko A P, Voitsekhovskiy A V J. Phys.: Conf. Ser. 541 012084 (2014)
  8. Lozovoy K, Voytsekhovskiy A et al 22 (3) (2014)
  9. Voitsekhovskii A V, Kokhanenko A P, Lozovoy K A Bull. Russ. Acad. Sci. Phys. 78 1058 (2014)
  10. Lozovoy K A, Voytsekhovskiy A V et al Surface Science 619 1 (2014)
  11. Prokhorov A S, Zhukova E S et al Radiophys Quantum El 56 620 (2014)
  12. Arapkina L V, Yuryev V A Journal Of Applied Physics 114 104304 (2013)
  13. Kuryliuk V V Ukr. J. Phys. 58 780 (2013)
  14. Kaniewska M, Engström O et al Solid-State Electronics 83 99 (2013)
  15. Roddatis V V, Yakunin S N et al J. Mater. Res. 28 1432 (2013)
  16. Arapkina L V, Krylova L A et al Journal Of Applied Physics 112 014311 (2012)
  17. Yuryev V A, Arapkina L V et al Nanoscale Res Lett 7 (1) (2012)
  18. Arapkina L V, Yuryev V A Journal Of Applied Physics 111 094307 (2012)
  19. Talochkin A B, Chistokhin I B J. Exp. Theor. Phys. 113 510 (2011)
  20. Yuryev V A, Arapkina L V Nanoscale Res Lett 6 (1) (2011)
  21. Arapkina L V, Yuryev V A et al Nanoscale Res Lett 6 (1) (2011)
  22. Arapkina L V, Yuryev V A Nanoscale Res Lett 6 (1) (2011)
  23. Arapkina L V, Yuryev V A Journal Of Applied Physics 109 104319 (2011)
  24. Arapkina L V, Yuryev V A Jetp Lett. 91 281 (2010)
  25. Arapkina L V, Yuryev V A Phys. Rev. B 82 (4) (2010)
  26. Arapkina L V, Yuryev V A et al Jetp Lett. 92 310 (2010)
  27. Zhukova E S, Gorshunov B P et al Jetp Lett. 92 793 (2010)

© 1918–2020 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions