Fabrication of germanium and silicon nanostructures using a scanning tunneling microscope

A.A. Shklyaev^a, b, M. Ichikawa^b
^aRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
^bQuantum-Phase Electronics Center, Department of Applied Physics, The University of Tokyo and Japan Science and Technology Agency, CREST, 7-3-1 Hongo, Tokyo, 113-8656, Japan

The state of the art of research on the fabrication of semiconductor surface nanostructures using a scanning tunneling microscope (STM) is reviewed. The continuous atom transfer occurring due to directional surface diffusion initiated by the STM electric field and involving field-induced evaporation is analyzed. The effect of irradiation with an external electron beam on the tip-sample interaction is discussed, which consists in reducing the barrier for direct interatomic reactions and in changing the direction of the tip-sample atomic transfer. The possibilities of fabricating germanium and silicon nanostructures such as islands and lines and also making silicon windows on oxidized silicon surfaces are demonstrated.

PACS: 68.37.Ef, 79.70.+q, 81.16.Ta (all)
DOI: 10.1070/PU2006v049n09ABEH006070
URL: https://ufn.ru/en/articles/2006/9/a/
Web of Science

000243785700001
Scopus

2-s2.0-33846649562
ADS NASA

2006PhyU...49..887S
Citation: Shklyaev A A, Ichikawa M "Fabrication of germanium and silicon nanostructures using a scanning tunneling microscope" Phys. Usp. 49 887–903 (2006)

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Оригинал: Шкляев А А, Ичикава М «Создание наноструктур германия и кремния с помощью зонда сканирующего туннельного микроскопа» УФН 176 913–930 (2006); DOI: 10.3367/UFNr.0176.200609a.0913