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Hard excitation of stimulated polariton-polariton scattering in semiconductor microcavities

 a,  a,  b,  c
a Prokhorov General Physics Institute of the Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119942, Russian Federation
b Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
c Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
Text can be downloaded in Russian. English translation is available on IOP Science.
PACS: 42.65.−k, 71.36.+c, 78.65.-n (all)
DOI: 10.1070/PU2005v048n03ABEH002125
URL: https://ufn.ru/en/articles/2005/3/g/
Citation: Gippius N A, Tikhodeev S G, Keldysh L V, Kulakovskii V D "Hard excitation of stimulated polariton-polariton scattering in semiconductor microcavities" Phys. Usp. 48 306–312 (2005)
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Оригинал: Гиппиус Н А, Тиходеев С Г, Келдыш Л В, Кулаковский В Д «Жесткий режим возбуждения поляритон-поляритонного рассеяния в полупроводниковых микрорезонаторах» УФН 175 327–334 (2005); DOI: 10.3367/UFNr.0175.200503h.0327

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