Hard excitation of stimulated polariton – polariton scattering in semiconductor microcavities

N.A. Gippius^a, S.G. Tikhodeev^a, L.V. Keldysh^b, V.D. Kulakovskii^c
^aProkhorov General Physics Institute of the Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russian Federation
^bLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
^cOsipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation

PACS: 42.65.−k, 71.36.+c, 78.65.-n (all)
DOI: 10.1070/PU2005v048n03ABEH002125
URL: https://ufn.ru/en/articles/2005/3/g/
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000230494900007
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2005PhyU...48..306G
Citation: Gippius N A, Tikhodeev S G, Keldysh L V, Kulakovskii V D "Hard excitation of stimulated polariton-polariton scattering in semiconductor microcavities" Phys. Usp. 48 306–312 (2005)

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PT Journal Article
TI Hard excitation of stimulated
polariton – polariton scattering
in semiconductor microcavities
AU Gippius N A
FAU Gippius NA
AU Tikhodeev S G
FAU Tikhodeev SG
AU Keldysh L V
FAU Keldysh LV
AU Kulakovskii V D
FAU Kulakovskii VD
DP 10 Mar, 2005
TA Phys. Usp.
VI 48
IP 3
PG 306-312
RX 10.1070/PU2005v048n03ABEH002125
URL https://ufn.ru/en/articles/2005/3/g/
SO Phys. Usp. 2005 Mar 10;48(3):306-312

Оригинал: Гиппиус Н А, Тиходеев С Г, Келдыш Л В, Кулаковский В Д «Жесткий режим возбуждения поляритон-поляритонного рассеяния в полупроводниковых микрорезонаторах» УФН 175 327–334 (2005); DOI: 10.3367/UFNr.0175.200503h.0327