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Hard excitation of stimulated polariton-polariton scattering in semiconductor microcavities

 a,  a,  b,  c
a Prokhorov General Physics Institute of the Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russian Federation
b Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
c Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
Fulltext pdf (248 KB)
Fulltext is also available at DOI: 10.1070/PU2005v048n03ABEH002125
PACS: 42.65.−k, 71.36.+c, 78.65.-n (all)
DOI: 10.1070/PU2005v048n03ABEH002125
URL: https://ufn.ru/en/articles/2005/3/g/
000230494900007
2005PhyU...48..306G
Citation: Gippius N A, Tikhodeev S G, Keldysh L V, Kulakovskii V D "Hard excitation of stimulated polariton-polariton scattering in semiconductor microcavities" Phys. Usp. 48 306–312 (2005)
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Оригинал: Гиппиус Н А, Тиходеев С Г, Келдыш Л В, Кулаковский В Д «Жесткий режим возбуждения поляритон-поляритонного рассеяния в полупроводниковых микрорезонаторах» УФН 175 327–334 (2005); DOI: 10.3367/UFNr.0175.200503h.0327

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