Conferences and symposia

Electronic properties of narrow gap IV-VI semiconductors

Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
Fulltext is available at IOP
PACS: 71.20.Nr, 73.20.−r (all)
DOI: 10.1070/PU2003v046n09ABEH001645
Citation: Volkov B A "Electronic properties of narrow gap IV-VI semiconductors" Phys. Usp. 46 984–986 (2003)
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Оригинал: Волков Б А «Электронные свойства узкощелевых полупроводников типа IV-VI» УФН 173 1013–1015 (2003); DOI: 10.3367/UFNr.0173.200309j.1013

References (9) Cited by (1) Similar articles (20) ↓

  1. B.A. Volkov, O.A. Pankratov “Inverted contact in semiconductors—a new inhomogeneous structure with a twodimensional gas of zero-mass electrons29 579–581 (1986)
  2. B.A. Volkov, O.A. Pankratov “Electronic structure of quasicubic crystals: energy bands, dielectric properties, and defects in narrow-gap semiconductors.29 575–577 (1986)
  3. S.A. Tarasenko “Electron properties of topological insulators. The structure of edge states and photogalvanic effects61 1026–1030 (2018)
  4. N.A. Gippius, V.D. Kulakovskii, S.G. Tikhodeev “Effect of electric field redistribution on the electronic and optical properties of nanostructures40 534–538 (1997)
  5. L.I. Magarill, D.A. Romanov, A.V. Chaplik “Low-dimensional electrons in curvilinear nanostructures43 283–285 (2000)
  6. V.F. Elesin, I.Yu. Kateev et alTheory of coherent oscillations in a resonant tunneling diode43 291–293 (2000)
  7. E.I. Rashba, K.B. Tolpygo “Fourth conference on semiconductor theory4 498–510 (1961)
  8. S.M. Stishov, L.G. Khvostantsev et alOn the 50th anniversary of the L F Vereshchagin Institute for High Pressure Physics, RAS (Scientific outreach session of the Physical Sciences Division of the Russian Academy of Sciences, 23 April 2008)51 1055–1083 (2008)
  9. S.V. Morozov “New effects in graphene with high carrier mobility55 408–412 (2012)
  10. Modern problems in physical sciences (Scientific session of the Physical Sciences Division of the Russian Academy of Sciences, 26 October 2011)55 408–425 (2012)
  11. B.A. Volkov, A.A. Gorbatsevich, Yu.V. Kopaev “Anomalous diamagnetic properties of systems with spontaneous current27 464–465 (1984)
  12. O.A. Pankratov “Understanding surface states of topological insulators61 1116–1126 (2018)
  13. V.M. Pudalov, S.G. Semenchinskii, V.S. Edel’man “Charge and potential of an inversion layer in a metalinsulator-semiconductor structure in a quantizing magnetic field28 635–636 (1985)
  14. S.V. Gaponov “Ultrathin solid-state films and multilayered structures: methods of fabrication, study, and applications28 522–524 (1985)
  15. S.M. Klotsman “Local structures, and diffusion, dynamic, and electronic properties of interface cores and adjoining regions of crystallites37 421–424 (1994)
  16. S.I. Radautsan “Investigation of Compound Semiconductive Materials in the Moldavian SSR17 448–450 (1974)
  17. V.V. Sobolev “Spectroscopy of Intrinsic Energy Levels of Solids17 456–457 (1974)
  18. G.D. Guseinov “Certain Results and Prospects of the Search for Complex Semiconductor Analogs12 795–795 (1970)
  19. V.N. Alfeev “Properties and Uses of Structures Based on Paraelectrics, Superconductors and Semiconductors19 768–769 (1976)
  20. V.S. Dneprovskii “Nonlinear optical properties of semiconducting quantum wires and dots39 401–403 (1996)

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