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Electronic properties of narrow gap IV-VI semiconductors


Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
Fulltext is available at IOP
PACS: 71.20.Nr, 73.20.−r (all)
DOI: 10.1070/PU2003v046n09ABEH001645
URL: https://ufn.ru/en/articles/2003/9/i/
Citation: Volkov B A "Electronic properties of narrow gap IV-VI semiconductors" Phys. Usp. 46 984–986 (2003)
BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks
TY JOUR
TI Electronic properties of narrow gap IV – VI semiconductors

AU Volkov, B. A.
PB Physics-Uspekhi
PY 2003
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 46
IS 9
SP 984-986
UR https://ufn.ru/en/articles/2003/9/i/
ER https://doi.org/10.1070/PU2003v046n09ABEH001645

Оригинал: Волков Б А «Электронные свойства узкощелевых полупроводников типа IV-VI» УФН 173 1013–1015 (2003); DOI: 10.3367/UFNr.0173.200309j.1013

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