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Electronic properties of narrow gap IV-VI semiconductors

Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
Fulltext is available at IOP
PACS: 71.20.Nr, 73.20.−r (all)
DOI: 10.1070/PU2003v046n09ABEH001645
Citation: Volkov B A "Electronic properties of narrow gap IV-VI semiconductors" Phys. Usp. 46 984–986 (2003)
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RT Journal
T1 Electronic properties of narrow gap IV – VI semiconductors

A1 Volkov,B.A.
PB Physics-Uspekhi
PY 2003
FD 10 Sep, 2003
JF Physics-Uspekhi
JO Phys. Usp.
VO 46
IS 9
SP 984-986
DO 10.1070/PU2003v046n09ABEH001645

Оригинал: Волков Б А «Электронные свойства узкощелевых полупроводников типа IV-VI» УФН 173 1013–1015 (2003); DOI: 10.3367/UFNr.0173.200309j.1013

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