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Electronic properties of narrow gap IV-VI semiconductors

Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
Fulltext is available at IOP
PACS: 71.20.Nr, 73.20.−r (all)
DOI: 10.1070/PU2003v046n09ABEH001645
Citation: Volkov B A "Electronic properties of narrow gap IV-VI semiconductors" Phys. Usp. 46 984–986 (2003)
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%0 Journal Article
%T Electronic properties of narrow gap IV – VI semiconductors

%A B. A. Volkov
%I Physics-Uspekhi
%D 2003
%J Phys. Usp.
%V 46
%N 9
%P 984-986

Оригинал: Волков Б А «Электронные свойства узкощелевых полупроводников типа IV-VI» УФН 173 1013–1015 (2003); DOI: 10.3367/UFNr.0173.200309j.1013

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