Issues

 / 

2003

 / 

September

  

Conferences and symposia


Electronic properties of narrow gap IV-VI semiconductors


Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
Fulltext is available at IOP
PACS: 71.20.Nr, 73.20.−r (all)
DOI: 10.1070/PU2003v046n09ABEH001645
URL: https://ufn.ru/en/articles/2003/9/i/
Citation: Volkov B A "Electronic properties of narrow gap IV-VI semiconductors" Phys. Usp. 46 984–986 (2003)
BibTex BibNote ® (generic)BibNote ® (RIS)MedlineRefWorks
%0 Journal Article
%T Electronic properties of narrow gap IV – VI semiconductors

%A B. A. Volkov
%I Physics-Uspekhi
%D 2003
%J Phys. Usp.
%V 46
%N 9
%P 984-986
%U https://ufn.ru/en/articles/2003/9/i/
%U https://doi.org/10.1070/PU2003v046n09ABEH001645

Оригинал: Волков Б А «Электронные свойства узкощелевых полупроводников типа IV-VI» УФН 173 1013–1015 (2003); DOI: 10.3367/UFNr.0173.200309j.1013

© 1918–2021 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions