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Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

 a,  a,  a,  a,  a,  a,  a,  a,  a,  a, b, c,  a
a Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
b Academic University, Khlopina str. 8, korp. 3, St. Petersburg, 194021, Russian Federation
c Vertically Integrated Systems (VI Systems GmbH), Hardenbergstr 7, Berlin, 10623, Germany
Fulltext pdf (110 KB)
Fulltext is also available at DOI: 10.1070/PU2001v044n08ABEH000968
PACS: 42.55.Px, 85.30.Vw
DOI: 10.1070/PU2001v044n08ABEH000968
URL: https://ufn.ru/en/articles/2001/8/f/
Citation: Krestnikov I L, Lundin V V, Sakharov A V, Bedarev D A, Zavarin E E, Musikhin Yu G, Shmidt N M, Tsatsul’nikov A F, Usikov A S, Ledentsov N N, Alferov Zh I "Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices" Phys. Usp. 44 815–816 (2001)
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Оригинал: Крестников И Л, Лундин В В, Сахаров А В, Бедарев Д А, Заварин Е Е, Мусихин Ю Г, Шмидт Н М, Цацульников А Ф, Усиков А С, Леденцов Н Н, Алферов Ж И «Гетероструктуры на основе нитридов третьей группы: технология, свойства, светоизлучающие приборы» УФН 171 857–858 (2001); DOI: 10.3367/UFNr.0171.200108e.0857

References (11) ↓ Cited by (1) Similar articles (20)

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  2. Lundin W V et al., in Booklet 8th Europ. Work. Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques. June 8-11, 1999. Prague (1999) p. 46
  3. Lundin W V et al., in Booklet 8th Europ. Work. Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques. June 8-11, 1999. Prague (1999) p. 49
  4. Sakharov A V et al. Phys. Status Solidi B 216 435 (1999)
  5. Sakharov A V et al., in Proc. Intern. Work. Nitride Semiconductors, September 24-27, 2000. Nagoya. IPAP Conf. Series Vol. 1 (2000) p. 241
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  11. Tsatsul’nikov A F et al. Semicond. Sci. Technol. 15 766 (2000)

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