Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

I.L. Krestnikov^a, V.V. Lundin^a, A.V. Sakharov^a, D.A. Bedarev^a, E.E. Zavarin^a, Yu.G. Musikhin^a, N.M. Shmidt^a, A.F. Tsatsul’nikov^a, A.S. Usikov^a, N.N. Ledentsov^a, b, c, Zh.I. Alferov^a
^aIoffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
^bAcademic University, Khlopina str. 8, korp. 3, St. Petersburg, 194021, Russian Federation
^cVertically Integrated Systems (VI Systems GmbH), Hardenbergstr 7, Berlin, 10623, Germany

PACS: 42.55.Px, 85.30.Vw
DOI: 10.1070/PU2001v044n08ABEH000968
URL: https://ufn.ru/en/articles/2001/8/f/
Citation: Krestnikov I L, Lundin V V, Sakharov A V, Bedarev D A, Zavarin E E, Musikhin Yu G, Shmidt N M, Tsatsul’nikov A F, Usikov A S, Ledentsov N N, Alferov Zh I "Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices" Phys. Usp. 44 815–816 (2001)

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PT Journal Article
TI Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices
AU Krestnikov I L
FAU Krestnikov IL
AU Lundin V V
FAU Lundin VV
AU Sakharov A V
FAU Sakharov AV
AU Bedarev D A
FAU Bedarev DA
AU Zavarin E E
FAU Zavarin EE
AU Musikhin Yu G
FAU Musikhin YG
AU Shmidt N M
FAU Shmidt NM
AU Tsatsul’nikov A F
FAU Tsatsul’nikov AF
AU Usikov A S
FAU Usikov AS
AU Ledentsov N N
FAU Ledentsov NN
AU Alferov Zh I
FAU Alferov ZI
DP 10 Aug, 2001
TA Phys. Usp.
VI 44
IP 8
PG 815-816
RX 10.1070/PU2001v044n08ABEH000968
URL https://ufn.ru/en/articles/2001/8/f/
SO Phys. Usp. 2001 Aug 10;44(8):815-816

Оригинал: Крестников И Л, Лундин В В, Сахаров А В, Бедарев Д А, Заварин Е Е, Мусихин Ю Г, Шмидт Н М, Цацульников А Ф, Усиков А С, Леденцов Н Н, Алферов Ж И «Гетероструктуры на основе нитридов третьей группы: технология, свойства, светоизлучающие приборы» УФН 171 857–858 (2001); DOI: 10.3367/UFNr.0171.200108e.0857