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Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

 a,  a,  a,  a,  a,  a,  a,  a,  a,  a, b, c,  a
a Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
b Academic University, Khlopina str. 8, korp. 3, St. Petersburg, 194021, Russian Federation
c Vertically Integrated Systems (VI Systems GmbH), Hardenbergstr 7, Berlin, 10623, Germany
Fulltext pdf (110 KB)
Fulltext is also available at DOI: 10.1070/PU2001v044n08ABEH000968
PACS: 42.55.Px, 85.30.Vw
DOI: 10.1070/PU2001v044n08ABEH000968
URL: https://ufn.ru/en/articles/2001/8/f/
Citation: Krestnikov I L, Lundin V V, Sakharov A V, Bedarev D A, Zavarin E E, Musikhin Yu G, Shmidt N M, Tsatsul’nikov A F, Usikov A S, Ledentsov N N, Alferov Zh I "Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices" Phys. Usp. 44 815–816 (2001)
BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks
RT Journal
T1 Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices
A1 Krestnikov,I.L.
A1 Lundin,V.V.
A1 Sakharov,A.V.
A1 Bedarev,D.A.
A1 Zavarin,E.E.
A1 Musikhin,Yu.G.
A1 Shmidt,N.M.
A1 Tsatsul’nikov,A.F.
A1 Usikov,A.S.
A1 Ledentsov,N.N.
A1 Alferov,Zh.I.
PB Physics-Uspekhi
PY 2001
FD 10 Aug, 2001
JF Physics-Uspekhi
JO Phys. Usp.
VO 44
IS 8
SP 815-816
DO 10.1070/PU2001v044n08ABEH000968
LK https://ufn.ru/en/articles/2001/8/f/

Оригинал: Крестников И Л, Лундин В В, Сахаров А В, Бедарев Д А, Заварин Е Е, Мусихин Ю Г, Шмидт Н М, Цацульников А Ф, Усиков А С, Леденцов Н Н, Алферов Ж И «Гетероструктуры на основе нитридов третьей группы: технология, свойства, светоизлучающие приборы» УФН 171 857–858 (2001); DOI: 10.3367/UFNr.0171.200108e.0857

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