Excitonic molecules in InGaAs/GaAs quantum dots

V.D. Kulakovskii^a, M. Bayer^b, M. Michel^b, A. Forchel^b, T. Gutbrod^b, F. Faller^b
^aOsipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
^bTechnische Physik, Universität Würzburg, Würzburg, Germany

PACS: 73.20.Dx, 71.35.+z, 73.90.+f
DOI: 10.1070/PU1998v041n02ABEH000340
URL: https://ufn.ru/en/articles/1998/2/d/
Web of Science

000072729300004
Citation: Kulakovskii V D, Bayer M, Michel M, Forchel A, Gutbrod T, Faller F "Excitonic molecules in InGaAs/GaAs quantum dots" Phys. Usp. 41 115–118 (1998)

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@article{Kulakovskii:1998,
	author = {V. D. Kulakovskii and M. Bayer and M. Michel and A. Forchel and T. Gutbrod and F. Faller},
	title = { Excitonic molecules in InGaAs/GaAs quantum dots},
	publisher = {Physics-Uspekhi},
	year = {1998},
	journal = {Phys. Usp.},
	volume = {41},
	number = {2},
	pages = {115-118},
	url = {https://ufn.ru/en/articles/1998/2/d/},
	doi = {10.1070/PU1998v041n02ABEH000340}
}

Оригинал: Кулаковский В Д, Бауэр М, Михель М, Форхел А, Гутброд Т, Фаллер Ф «Экситонные комплексы в InGaAs/GaAs квантовых точках» УФН 168 123–127 (1998); DOI: 10.3367/UFNr.0168.199802d.0123