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Excitonic molecules in InGaAs/GaAs quantum dots

 a,  b,  b,  b,  b,  b
a Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
b Technische Physik, Universität Würzburg, Würzburg, Germany
Fulltext pdf (127 KB)
Fulltext is also available at DOI: 10.1070/PU1998v041n02ABEH000340
PACS: 73.20.Dx, 71.35.+z, 73.90.+f
DOI: 10.1070/PU1998v041n02ABEH000340
URL: https://ufn.ru/en/articles/1998/2/d/
000072729300004
Citation: Kulakovskii V D, Bayer M, Michel M, Forchel A, Gutbrod T, Faller F "Excitonic molecules in InGaAs/GaAs quantum dots" Phys. Usp. 41 115–118 (1998)
BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks
RT Journal
T1  Excitonic molecules in InGaAs/GaAs quantum dots
A1 Kulakovskii,V.D.
A1 Bayer,M.
A1 Michel,M.
A1 Forchel,A.
A1 Gutbrod,T.
A1 Faller,F.
PB Physics-Uspekhi
PY 1998
FD 10 Feb, 1998
JF Physics-Uspekhi
JO Phys. Usp.
VO 41
IS 2
SP 115-118
DO 10.1070/PU1998v041n02ABEH000340
LK https://ufn.ru/en/articles/1998/2/d/

Оригинал: Кулаковский В Д, Бауэр М, Михель М, Форхел А, Гутброд Т, Фаллер Ф «Экситонные комплексы в InGaAs/GaAs квантовых точках» УФН 168 123–127 (1998); DOI: 10.3367/UFNr.0168.199802d.0123

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