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Excitonic molecules in InGaAs/GaAs quantum dots

 a,  b,  b,  b,  b,  b
a Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
b Technische Physik, Universität Würzburg, Würzburg, Germany
Fulltext pdf (127 KB)
Fulltext is also available at DOI: 10.1070/PU1998v041n02ABEH000340
PACS: 73.20.Dx, 71.35.+z, 73.90.+f
DOI: 10.1070/PU1998v041n02ABEH000340
URL: https://ufn.ru/en/articles/1998/2/d/
000072729300004
Citation: Kulakovskii V D, Bayer M, Michel M, Forchel A, Gutbrod T, Faller F "Excitonic molecules in InGaAs/GaAs quantum dots" Phys. Usp. 41 115–118 (1998)
BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks
PT Journal Article
TI  Excitonic molecules in InGaAs/GaAs quantum dots
AU Kulakovskii V D
FAU Kulakovskii VD
AU Bayer M
FAU Bayer M
AU Michel M
FAU Michel M
AU Forchel A
FAU Forchel A
AU Gutbrod T
FAU Gutbrod T
AU Faller F
FAU Faller F
DP 10 Feb, 1998
TA Phys. Usp.
VI 41
IP 2
PG 115-118
RX 10.1070/PU1998v041n02ABEH000340
URL https://ufn.ru/en/articles/1998/2/d/
SO Phys. Usp. 1998 Feb 10;41(2):115-118

Оригинал: Кулаковский В Д, Бауэр М, Михель М, Форхел А, Гутброд Т, Фаллер Ф «Экситонные комплексы в InGaAs/GaAs квантовых точках» УФН 168 123–127 (1998); DOI: 10.3367/UFNr.0168.199802d.0123

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