Room temperature molecular single-electron transistor

E.S. Soldatov^a, V.V. Khanin^a, A.S. Trifonov^a, S.P. Gubin^b, V.V. Kolesov^c, D.E. Presnov^d, S.A. Yakovenko^a, G.V. Khomutov^a, A.N. Korotkov^e
^aLomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
^bN.S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninsky prosp. 31, Moscow, 119991, Russian Federation
^cInstitute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11, Moscow, 125009, Russian Federation
^dLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
^eLomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation

PACS: 73.40.−c, 74.80.Fp
DOI: 10.1070/PU1998v041n02ABEH000364
URL: https://ufn.ru/en/articles/1998/2/ab/
Web of Science

000072729300027
Citation: Soldatov E S, Khanin V V, Trifonov A S, Gubin S P, Kolesov V V, Presnov D E, Yakovenko S A, Khomutov G V, Korotkov A N "Room temperature molecular single-electron transistor" Phys. Usp. 41 202–204 (1998)

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PT Journal Article
TI Room temperature molecular single-electron transistor
AU Soldatov E S
FAU Soldatov ES
AU Khanin V V
FAU Khanin VV
AU Trifonov A S
FAU Trifonov AS
AU Gubin S P
FAU Gubin SP
AU Kolesov V V
FAU Kolesov VV
AU Presnov D E
FAU Presnov DE
AU Yakovenko S A
FAU Yakovenko SA
AU Khomutov G V
FAU Khomutov GV
AU Korotkov A N
FAU Korotkov AN
DP 10 Feb, 1998
TA Phys. Usp.
VI 41
IP 2
PG 202-204
RX 10.1070/PU1998v041n02ABEH000364
URL https://ufn.ru/en/articles/1998/2/ab/
SO Phys. Usp. 1998 Feb 10;41(2):202-204

Оригинал: Солдатов Е С, Ханин В В, Трифонов А С, Губин С П, Колесов В В, Преснов Д Е, Яковенко С А, Хомутов Г Б, Коротков А Н «Молекулярный одноэлектронный транзистор, работающий при комнатной температуре» УФН 168 217–219 (1998); DOI: 10.3367/UFNr.0168.199802ab.0217