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Room temperature molecular single-electron transistor

 a,  a,  a,  b,  c,  d,  a,  a,  e
a Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
b N.S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninsky prosp. 31, Moscow, 119991, Russian Federation
c Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11, Moscow, 125009, Russian Federation
d Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
e Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
Fulltext pdf (154 KB)
Fulltext is also available at DOI: 10.1070/PU1998v041n02ABEH000364
PACS: 73.40.−c, 74.80.Fp
DOI: 10.1070/PU1998v041n02ABEH000364
URL: https://ufn.ru/en/articles/1998/2/ab/
000072729300027
Citation: Soldatov E S, Khanin V V, Trifonov A S, Gubin S P, Kolesov V V, Presnov D E, Yakovenko S A, Khomutov G V, Korotkov A N "Room temperature molecular single-electron transistor" Phys. Usp. 41 202–204 (1998)
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Оригинал: Солдатов Е С, Ханин В В, Трифонов А С, Губин С П, Колесов В В, Преснов Д Е, Яковенко С А, Хомутов Г Б, Коротков А Н «Молекулярный одноэлектронный транзистор, работающий при комнатной температуре» УФН 168 217–219 (1998); DOI: 10.3367/UFNr.0168.199802ab.0217

References (18) Cited by (23) ↓ Similar articles (20)

  1. Sergeyev D M Tech. Phys. 65 573 (2020)
  2. Presnov D E, Kafanov S G et al Jetp Lett. 108 492 (2018)
  3. (International Conference on Micro- and Nano-Electronics 2014) Vol. International Conference on Micro- and Nano-Electronics 2014High-temperature single-electron transistor based on a gold nanoparticleAlexander A.OrlikovskyS. A.DagesyanA. S.StepanovE. S.SoldatovG.Zharik9440 (2014) p. 94400P
  4. Wei W, Han J, Lombardi F Microelectronics Journal 45 394 (2014)
  5. Wei W, Han J, Lombardi F IEEE Trans. Nanotechnology 12 57 (2013)
  6. Lombardi F, Wei W, Han J Proceedings of the great lakes symposium on VLSI, (2012) p. 221
  7. Wei W, Jie H, Lombardi F 2011 IEEE/ACM International Symposium on Nanoscale Architectures, (2011) p. 16
  8. Babich A V, Pogosov V V Surface Science 604 210 (2010)
  9. Wheeler W D, Dahnovsky Yu J. Phys. Chem. C 113 1088 (2009)
  10. Saripalli V, Narayanan V, Datta S Lecture Notes Of The Institute For Computer Sciences, Social Informatics And Telecommunications Engineering Vol. Nano-NetUltra Low Energy Binary Decision Diagram Circuits Using Few Electron Transistors20 Chapter 27 (2009) p. 200
  11. Wheeler W D, Dahnovsky Yu 129 (15) (2008)
  12. Pogosov V V, Vasyutin E V, Babich A V Tech. Phys. Lett. 33 719 (2007)
  13. Pogosov V V, Vasyutin E V Russ Microelectron 36 104 (2007)
  14. Pogosov V V, Vasyutin E V et al Phys. Solid State 48 1965 (2006)
  15. Zhang F, Tang R, Kim Y-B Microelectronics Journal 36 741 (2005)
  16. Suganuma Y, Trudeau P -E et al 118 9769 (2003)
  17. Soldatov E S, Gubin S P et al Microelectronic Engineering 69 536 (2003)
  18. Suganuma Y, Trudeau P -E, Dhirani A -A Phys. Rev. B 66 (24) (2002)
  19. Klymenko Yu A, Cheremnykh O K et al Kosm. Nauka Tehnol. 7 53 (2001)
  20. Grigor’ev S L Tech. Phys. 46 1457 (2001)
  21. Dykhne A M, Zosimov V V, Rudavets A G Dokl. Phys. 45 11 (2000)
  22. Vasilevskaya T N, Andreev N S et al Phys. Solid State 41 1918 (1999)
  23. Likharev K K Proc. IEEE 87 606 (1999)
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