RSS feeds
РусскийEnglish
Issue 12, 2025
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

1995

 / 

July

←  →

Special issue


Interface states in inhomogeneous semiconductor structures

, ,
Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

The conditions for the appearance and the spectrum of localised electron states are reviewed for various inhomogeneous structures made of narrow-gap semiconductors with mutually inverted energy bands. The methods of supersymmetry and factorisation are used to solve Dirac-type equations with inhomogeneous external potentials in one-dimensional, two-dimensional, and three-dimensional systems.

Fulltext pdf (632 KB)
Fulltext is also available at DOI: 10.1070/PU1995v038n07ABEH000097
PACS: 73.20.Dx, 73.40.Lq, 71.28.+d (all)
DOI: 10.1070/PU1995v038n07ABEH000097
URL: https://ufn.ru/en/articles/1995/7/e/
A1995RU84500004
Citation: Volkov B A, Idlis B G, Usmanov M Sh "Interface states in inhomogeneous semiconductor structures" Phys. Usp. 38 761–771 (1995)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Волков Б А, Идлис Б Г, Усманов М Ш «Приграничные состояния в неоднородных полупроводниковых структурах» УФН 165 799–810 (1995); DOI: 10.3367/UFNr.0165.199507e.0799

References (29) Cited by (30) ↓ Similar articles (2)

  1. Rusinov I P, Men’shov V N, Chulkov E V Phys. Rev. B 104 (3) (2021)
  2. Galaktionov A V Phys. Rev. B 101 (13) (2020)
  3. Ratnikov P V, Silin A P Uspekhi Fizicheskikh Nauk 188 (12) 1249 (2018) [Ratnikov P V, Silin A P Phys.-Usp. 61 (12) 1139 (2018)]
  4. Galeeva A V, Artamkin A I et al Beilstein J. Nanotechnol. 9 1035 (2018)
  5. Volkov V A, Enaldiev V V J. Exp. Theor. Phys. 122 (3) 608 (2016)
  6. Enaldiev V V, Volkov V A Jetp Lett. 104 (11) 784 (2016)
  7. Zagorodnev I V, Devizorova Zh A, Enaldiev V V Phys. Rev. B 92 (19) (2015)
  8. Enaldiev V V, Zagorodnev I V, Volkov V A Jetp Lett. 101 (2) 89 (2015)
  9. Artemenko S N, Kaladzhyan V O Jetp Lett. 97 (2) 82 (2013)
  10. Latyshev Yu I, Orlov A P et al Jetp Lett. 98 (4) 214 (2013)
  11. Ratnikov P V, Silin A P J. Exp. Theor. Phys. 114 (3) 512 (2012)
  12. Aleshchenko Yu A, Kapaev V V, Kopaev Yu V Semicond. Sci. Technol. 26 (1) 014021 (2011)
  13. Aleshchenko Yu A, Kapaev V V, Kopaev Yu V J Russ Laser Res 31 (6) 533 (2010)
  14. Ratnikov P V, Silin A P Bull. Lebedev Phys. Inst. 36 (2) 34 (2009)
  15. Vildanov N M, Silin A P Bull. Lebedev Phys. Inst. 36 (7) 205 (2009)
  16. Lozovik Yu E, Merkulova S P, Sokolik A A Uspekhi Fizicheskikh Nauk 178 (7) 757 (2008)
  17. Ratnikov P V, Silin A P Bull. Lebedev Phys. Inst. 35 (11) 328 (2008)
  18. Ratnikov P V Jetp Lett. 87 (6) 292 (2008)
  19. Ratnikov P V, Silin A P Bull. Lebedev Phys. Inst. 35 (1) 27 (2008)
  20. Ratnikov P V, Silin A P Bull. Lebedev Phys. Inst. 34 (4) 122 (2007)
  21. Vildanov N M, Silin A P Bull. Lebedev Phys. Inst. 34 (12) 357 (2007)
  22. Volkov B A Uspekhi Fizicheskikh Nauk 173 (9) 1013 (2003)
  23. Kolesnikov A V, Lipperheide R, Wille U Phys. Rev. B 63 (20) (2001)
  24. Silin A P, Shubenkov S V Phys. Solid State 42 (1) 24 (2000)
  25. Silin A P, Shubenkov S V Phys. Solid State 40 (7) 1223 (1998)
  26. Kolesnikov A V, Silin A P J. Phys.: Condens. Matter 9 (49) 10929 (1997)
  27. Malkova N M, Kantser V G J. Phys.: Condens. Matter 9 (45) 9909 (1997)
  28. Kapaev V V, Kopaev Yu V Jetp Lett. 65 (2) 202 (1997)
  29. Kantser V G, Malkova N M Phys. Solid State 39 (7) 1150 (1997)
  30. Kantser V G, Malkova N M Phys. Rev. B 56 (4) 2004 (1997)
© 1918–2025 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions