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Interface states in inhomogeneous semiconductor structures

, ,
Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

The conditions for the appearance and the spectrum of localised electron states are reviewed for various inhomogeneous structures made of narrow-gap semiconductors with mutually inverted energy bands. The methods of supersymmetry and factorisation are used to solve Dirac-type equations with inhomogeneous external potentials in one-dimensional, two-dimensional, and three-dimensional systems.

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Fulltext is also available at DOI: 10.1070/PU1995v038n07ABEH000097
PACS: 73.20.Dx, 73.40.Lq, 71.28.+d (all)
DOI: 10.1070/PU1995v038n07ABEH000097
URL: https://ufn.ru/en/articles/1995/7/e/
A1995RU84500004
Citation: Volkov B A, Idlis B G, Usmanov M Sh "Interface states in inhomogeneous semiconductor structures" Phys. Usp. 38 761–771 (1995)
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Оригинал: Волков Б А, Идлис Б Г, Усманов М Ш «Приграничные состояния в неоднородных полупроводниковых структурах» УФН 165 799–810 (1995); DOI: 10.3367/UFNr.0165.199507e.0799

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