Issues

 / 

1995

 / 

July

  

Special issue


Interface states in inhomogeneous semiconductor structures

, ,
Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

The conditions for the appearance and the spectrum of localised electron states are reviewed for various inhomogeneous structures made of narrow-gap semiconductors with mutually inverted energy bands. The methods of supersymmetry and factorisation are used to solve Dirac-type equations with inhomogeneous external potentials in one-dimensional, two-dimensional, and three-dimensional systems.

Text can be downloaded in Russian. English translation is available on IOP Science.
PACS: 73.20.Dx, 73.40.Lq, 71.28.+d (all)
DOI: 10.1070/PU1995v038n07ABEH000097
URL: https://ufn.ru/en/articles/1995/7/e/
Citation: Volkov B A, Idlis B G, Usmanov M Sh "Interface states in inhomogeneous semiconductor structures" Phys. Usp. 38 761–771 (1995)
BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks
RT Journal
T1 Interface states in inhomogeneous semiconductor structures
A1 Volkov,B.A.
A1 Idlis,B.G.
A1 Usmanov,M.Sh.
PB Physics-Uspekhi
PY 1995
FD 10 Jul, 1995
JF Physics-Uspekhi
JO Phys. Usp.
VO 38
IS 7
SP 761-771
DO 10.1070/PU1995v038n07ABEH000097
LK https://ufn.ru/en/articles/1995/7/e/

Оригинал: Волков Б А, Идлис Б Г, Усманов М Ш «Приграничные состояния в неоднородных полупроводниковых структурах» УФН 165 799–810 (1995); DOI: 10.3367/UFNr.0165.199507e.0799

© 1918–2019 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions