Special issue

Interface states in inhomogeneous semiconductor structures

, ,
Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

The conditions for the appearance and the spectrum of localised electron states are reviewed for various inhomogeneous structures made of narrow-gap semiconductors with mutually inverted energy bands. The methods of supersymmetry and factorisation are used to solve Dirac-type equations with inhomogeneous external potentials in one-dimensional, two-dimensional, and three-dimensional systems.

Fulltext is available at IOP
PACS: 73.20.Dx, 73.40.Lq, 71.28.+d (all)
DOI: 10.1070/PU1995v038n07ABEH000097
Citation: Volkov B A, Idlis B G, Usmanov M Sh "Interface states in inhomogeneous semiconductor structures" Phys. Usp. 38 761–771 (1995)
BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks
PT Journal Article
TI Interface states in inhomogeneous semiconductor structures
AU Volkov B A
FAU Volkov BA
AU Idlis B G
FAU Idlis BG
AU Usmanov M Sh
FAU Usmanov MS
DP 10 Jul, 1995
TA Phys. Usp.
VI 38
IP 7
PG 761-771
RX 10.1070/PU1995v038n07ABEH000097
SO Phys. Usp. 1995 Jul 10;38(7):761-771

Оригинал: Волков Б А, Идлис Б Г, Усманов М Ш «Приграничные состояния в неоднородных полупроводниковых структурах» УФН 165 799–810 (1995); DOI: 10.3367/UFNr.0165.199507e.0799

© 1918–2020 Uspekhi Fizicheskikh Nauk
Email: Editorial office contacts About the journal Terms and conditions