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1989

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August

  

Reviews of topical problems


Quasiamorphous semiconductors

The experimental data on the electrical, thermal, and optical properties of high-boron compounds and modifications of boron--refractory crystals distinguished by specific and complicated structure--are reviewed. It is shown that depending on the complexity of the crystalline structure the properties of the materials transform, systematically approaching the properties characteristic of amorphous semiconductors; a new class of materials is thus identified--quasiamorphous semiconductors. In the limiting case of the most complicated structures, they can be regarded as natural structural models of amorphous semiconductors.

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Fulltext is also available at DOI: 10.1070/PU1989v032n08ABEH002746
PACS: 61.43.Dq, 72.80.Ng, 71.23.Cq (all)
DOI: 10.1070/PU1989v032n08ABEH002746
URL: https://ufn.ru/en/articles/1989/8/b/
Citation: Golikova O A "Quasiamorphous semiconductors" Sov. Phys. Usp. 32 665–677 (1989)
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Оригинал: Голикова О А «Квазиаморфные полупроводники» УФН 158 581–604 (1989); DOI: 10.3367/UFNr.0158.198908b.0581

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