The experimental data on the electrical, thermal, and optical properties of high-boron compounds and modifications of boron--refractory crystals distinguished by specific and complicated structure--are reviewed. It is shown that depending on the complexity of the crystalline structure the properties of the materials transform, systematically approaching the properties characteristic of amorphous semiconductors; a new class of materials is thus identified--quasiamorphous semiconductors. In the limiting case of the most complicated structures, they can be regarded as natural structural models of amorphous semiconductors.

%0 Journal Article
%T Quasiamorphous semiconductors
%A O. A. Golikova
%I Physics-Uspekhi
%D 1989
%J Phys. Usp.
%V 32
%N 8
%P 665-677
%U https://ufn.ru/en/articles/1989/8/b/
%U https://doi.org/10.1070/PU1989v032n08ABEH002746