Issues

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1989

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August

  

Reviews of topical problems


Quasiamorphous semiconductors

The experimental data on the electrical, thermal, and optical properties of high-boron compounds and modifications of boron--refractory crystals distinguished by specific and complicated structure--are reviewed. It is shown that depending on the complexity of the crystalline structure the properties of the materials transform, systematically approaching the properties characteristic of amorphous semiconductors; a new class of materials is thus identified--quasiamorphous semiconductors. In the limiting case of the most complicated structures, they can be regarded as natural structural models of amorphous semiconductors.

Fulltext pdf (581 KB)
Fulltext is also available at DOI: 10.1070/PU1989v032n08ABEH002746
PACS: 61.43.Dq, 72.80.Ng, 71.23.Cq (all)
DOI: 10.1070/PU1989v032n08ABEH002746
URL: https://ufn.ru/en/articles/1989/8/b/
Citation: Golikova O A "Quasiamorphous semiconductors" Sov. Phys. Usp. 32 665–677 (1989)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks
@article{Golikova:1989,
	author = {O. A. Golikova},
	title = {Quasiamorphous semiconductors},
	publisher = {Physics-Uspekhi},
	year = {1989},
	journal = {Phys. Usp.},
	volume = {32},
	number = {8},
	pages = {665-677},
	url = {https://ufn.ru/en/articles/1989/8/b/},
	doi = {10.1070/PU1989v032n08ABEH002746}
}

:    « » 158 581–604 (1989); DOI: 10.3367/UFNr.0158.198908b.0581

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