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Charge and potential of an inversion layer in a metalinsulator-semiconductor structure in a quantizing magnetic field

 a, ,  b
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
b P.L. Kapitza Institute for Physical Problems, Russian Academy of Sciences, ul. Kosygina 2, Moscow, 117334, Russian Federation
Fulltext pdf (89 KB)
Fulltext is also available at DOI: 10.1070/PU1985v028n07ABEH003877
PACS: 73.20.−r
DOI: 10.1070/PU1985v028n07ABEH003877
URL: https://ufn.ru/en/articles/1985/7/h/
Citation: Pudalov V M, Semenchinskii S G, Edel’man V S "Charge and potential of an inversion layer in a metalinsulator-semiconductor structure in a quantizing magnetic field" Sov. Phys. Usp. 28 635–636 (1985)
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Оригинал: Пудалов В М, Семенчинский С Г, Эдельман В С «Заряд и потенциал инверсионного слоя МДП-структуры в квантующем магнитном поле» УФН 146 536–538 (1985); DOI: 10.3367/UFNr.0146.198507h.0536

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