Charge and potential of an inversion layer in a metalinsulator-semiconductor structure in a quantizing magnetic field

V.M. Pudalov^a, S.G. Semenchinskii, V.S. Edel’man^b
^aLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
^bKapitza Institute of Physical Problems, Russian Academy of Sciences, ul. Kosygina 2, Moscow, 117334, Russian Federation

PACS: 73.20.−r
DOI: 10.1070/PU1985v028n07ABEH003877
URL: https://ufn.ru/en/articles/1985/7/h/
Citation: Pudalov V M, Semenchinskii S G, Edel’man V S "Charge and potential of an inversion layer in a metalinsulator-semiconductor structure in a quantizing magnetic field" Sov. Phys. Usp. 28 635–636 (1985)

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RT Journal
T1 Charge and potential of an inversion layer in a metalinsulator-semiconductor structure in a quantizing magnetic field
A1 Pudalov,V.M.
A1 Semenchinskii,S.G.
A1 Edel’man,V.S.
PB Physics-Uspekhi
PY 1985
FD 10 Jul, 1985
JF Physics-Uspekhi
JO Phys. Usp.
VO 28
IS 7
SP 635-636
DO 10.1070/PU1985v028n07ABEH003877
LK https://ufn.ru/en/articles/1985/7/h/

Оригинал: Пудалов В М, Семенчинский С Г, Эдельман В С «Заряд и потенциал инверсионного слоя МДП-структуры в квантующем магнитном поле» УФН 146 536–538 (1985); DOI: 10.3367/UFNr.0146.198507h.0536