Charge and potential of an inversion layer in a metalinsulator-semiconductor structure in a quantizing magnetic field

V.M. Pudalov^a, S.G. Semenchinskii, V.S. Edel’man^b
^aLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
^bKapitza Institute of Physical Problems, Russian Academy of Sciences, ul. Kosygina 2, Moscow, 117334, Russian Federation

PACS: 73.20.−r
DOI: 10.1070/PU1985v028n07ABEH003877
URL: https://ufn.ru/en/articles/1985/7/h/
Citation: Pudalov V M, Semenchinskii S G, Edel’man V S "Charge and potential of an inversion layer in a metalinsulator-semiconductor structure in a quantizing magnetic field" Sov. Phys. Usp. 28 635–636 (1985)

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%0 Journal Article
%T Charge and potential of an inversion layer in a metalinsulator-semiconductor structure in a quantizing magnetic field
%A V. M. Pudalov
%A S. G. Semenchinskii
%A V. S. Edel’man
%I Physics-Uspekhi
%D 1985
%J Phys. Usp.
%V 28
%N 7
%P 635-636
%U https://ufn.ru/en/articles/1985/7/h/
%U https://doi.org/10.1070/PU1985v028n07ABEH003877

Оригинал: Пудалов В М, Семенчинский С Г, Эдельман В С «Заряд и потенциал инверсионного слоя МДП-структуры в квантующем магнитном поле» УФН 146 536–538 (1985); DOI: 10.3367/UFNr.0146.198507h.0536