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Issues/1983/February |
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| From the current literature |
Trap trajectories and the cutoff of dissipative effects in semiconductors
1. Topology of trajectories in momentum space 175
2. Cutoff of dissipative effects 175
3. Smearing of the critical fields H1 and H2 176
4. Gauss-ampere characteristics (experiment) 177
5. Nonequilibrium nature of the distribution in crossed fields 177
6. Hole inversion in germanium 178
7. Alternating fields 179
References 179
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PACS: 72.20.Jv, 72.20.My, 72.20.Dp ()
DOI: URL: https://ufn.ru/en/articles/1983/2/e/ Citation: Levinson I B "Trap trajectories and the cutoff of dissipative effects in semiconductors" Sov. Phys. Usp. 26 176–181 (1983) Îðèãèíàë: Ëåâèíñîí È Á «Òðàåêòîðèè-ëîâóøêè è ñðûâ äèññèïàòèâíûõ ýôôåêòîâ â ïîëóïðîâîäíèêàõ» ÓÔÍ 139 347–355 (1983); |
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