The high-index surface—a superlattice for two-dimensional electrons

V.A. Volkov^a, V.A. Petrov^b, V.B. Sandomirskii
^aInstitute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11, Moscow, 125009, Russian Federation
^bState Research Center ‘Institute of High Energy Physics’, ul. Pobedy 1, Protvino, Moscow Region, 142280, Russian Federation

A review is given of low-temperature studies of the properties of the two-dimensional electron gas in inversion layers on high-index Si surfaces. The long crystallographic periods associated with such surfaces produce the superlattice effect in the spectrum of the quasi-two-dimensional electron gas. The kinetic coefficients are found to exhibit singularities when the Fermi level and minigaps cross. This was established by measuring the static and the high-frequency conductivities, the Shubnikov--de Haas oscillations, the photoresistivity, the emission of thermal electrons, and the cyclotron resonance in $n$-type inversion layers near (001) for electron concentrations in the range 10$^{12}$ -- 10$^{14}$ cm$^{-2}$. The minigap width varies from 1 to 20 meV, depending on the electron concentration. The position of the minigaps in $K$-space (but not their size) is in quantitative agreement with theory.

PACS: 73.20.Cw, 73.25.+i
DOI: 10.1070/PU1980v023n07ABEH005116
URL: https://ufn.ru/en/articles/1980/7/d/
Citation: Volkov V A, Petrov V A, Sandomirskii V B "The high-index surface—a superlattice for two-dimensional electrons" Sov. Phys. Usp. 23 375–385 (1980)

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Оригинал: Волков В А, Петров В А, Сандомирский В Б «Поверхность с высокими кристаллографическими индексами — сверхрешетка для двумерных электронов» УФН 131 423–440 (1980); DOI: 10.3367/UFNr.0131.198007d.0423

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